Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof

ABSTRACT

An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention generally relates to an optical-pickupslider using an optical near-field and floating a predetermined distanceabove a high-density recording medium by an air flow, and amanufacturing method thereof.

[0003] The present invention further relates to a probe suitable forgathering incident light and emitting it to a sample to be measured or arecording medium for example, and a manufacturing method thereof, aprobe array and a manufacturing method thereof, and, in more detail, toa probe which can gather incident light and generate an opticalnear-field and/or propagation light, a manufacturing method thereof, aprobe array and a manufacturing method thereof.

[0004] 2. Description of the Related Art

[0005] In a high-density information recording device using an opticalnear-field, as shown in Japanese Laid-Open Patent Application No.9-198830 for example, recording and reading of information is performedon a recording-medium disc in a condition in which a slider of anoptical pickup (optical-pickup slider) floats a distance equal to orsmaller than hundreds of nanometers above a surface of therecording-medium disc by an air flow generated due to rotation of therecording-medium disc. As shown in FIG. 1, a slider 61 disclosed inJapanese Laid-Open Patent Application No. 9-198830 has a conical hole 62passing between a side facing a recording medium and an opposite sideformed therein, and has an aperture 63 on the side facing the recordingmedium. Light is incident from a larger opening of the hole 62 and anoptical near-field is generated in the vicinity of the aperture 63.

[0006] As shown in FIG. 2, in a head of an information recording deviceusing this slider 61, a light source 11 and a lens 12 are provided onthe side opposite to the side of the slider 61 facing the recordingmedium 14. Light from the light source 11 is incident on the hole 62 ofthe slider 61 through the lens 12. By this light, an optical near-fieldgenerated in the vicinity of the aperture 63 is incident on therecording medium. Light incident on the recording medium has a diameteron the order of a diameter of the aperture 63, and it is possible toincrease a resolution in recording/detecting, by this light, to onehigher than 200 nm. Recording by this head is such that an energyapplied to the recording medium 14 is changed, as a result of anintensity of light from the light source 11 being changed, andinformation is recorded on the recording medium 14. Further, detectingof information is performed using a photodetector 64 arranged on a sideof the recording medium 14 opposite to a side facing the slider 61.Specifically, an optical near-field generated at the aperture 63 of theslider 61 generates propagation light as a result of contacting therecording medium 14, and the propagation light is detected by thephotodetector 64, and, thus, information written on the recording mediumcan be detected. Thus, high-density recording can be performed using anoptical near-field.

[0007] Further, M. B. Lee, T. Nakano, T. Yatsui, M. Kourogi, K. Tsutsui,N. Atoda, and M. Ohtsu, “Fabrication of Si planar aperture array forhigh speed near-field optical storage and readout”, Technical digest ofthe Pacific Rim Conference on Laser and Electro-Optics, Makuhari, Japan,No. WL2, pp. 91-92, July 1997 discloses, as shown in FIG. 3, anear-field optical probe 71 in which an inverse conical hole is formedin a silicon single-crystal substrate. When this probe 71 is made, asilicon single-crystal substrate 72 having thermal oxidation films 73formed on both sides thereof, having a thickness of 270 μm and having(100) plane orientation, as shown in FIG. 4A, photo resist 74 is coatedon the thermal oxidation films 73, and an opening of 10 μm×10 μm isformed by photolithographic etching, as shown in FIG. 4B. Then, as shownin FIG. 4C, single-crystal anisotropic etching of silicon is performedby KOH solution of 80° C. and a concentration of 10 weight %. Thereby,an inverse-pyramid-shaped hole 75 surrounded by a (111) plane of thesilicon single-crystal substrate is formed. Then, as shown in FIG. 4D,photo resist 74 is coated on both sides, and a thermal-oxidation-filmpattern having a large opening is made on the reverse side byphotolithographic etching. Then, as shown in FIG. 4E, single-crystalanisotropic etching of silicon is performed from the reverse side by KOHsolution again. At this time, the etching is stopped so that a throughhole on the order of sub-microns is formed on the bottom of thepyramid-shaped hole 75. The etching is stopped so that the openingdimension equal to or smaller than sub-microns can be obtained as aresult of an etching speed being previously measured and a time ofetching stoppage being controlled. Then, as shown in FIG. 4F, fringes ofthe thermal oxidation films are removed by a dicing saw or by etching.Then, as shown in FIG. 4G, gold 76 is spattered, and, thereby, laserlight is prevented from being incident on a recording material throughportions other than the openings. Further, for assuring that the etchingis stopped just in time, as shown in FIGS. 5A through 5G, an SOI(Silicon-On-Insulator) substrate 78 having an SiO₂ film 77 in the middleis used. By this method, it is possible to obtain an opening having adiameter of 200 nm in a substrate.

[0008] An opening having a diameter equal to or smaller than 200 nm isformed on a side facing a recording medium in a slider disclosed inJapanese Laid-Open Patent Application No. 9-198830, and an evanescentwave is generated from this hole. However, this document does notdisclose how to obtain this aperture, concretely. The slider has athickness of millimeters in general, and it is not easy to form a verysmall aperture equal to or smaller than 200 nm through this thickness.Somewhat special technical measure is needed.

[0009] Further, the near-field optical probe shown in FIG. 3 is made, asa result of, as shown in FIGS. 4A through 4G, the inverse-pyramid-shapedhole being formed by anisotropic etching, and, then, the large openingbeing formed by etching from the reverse side. In this case, the openingdimension of the minute hole is determined by the depth of etching fromthe reverse side. In order to stop the etching just in time so as toobtain the opening dimension of tens of nanometers, the etching time ofthe reverse side is previously measured, and, thereby, the etching timeis determined. However, thickness of silicon substrates varies on theorder of tens of microns among the substrates. Further, an etching speedvaries in a wide range depending on an amount of silicon dissolved in anetching liquid, an amount of oxide dissolved in the etching liquid, aslight temperature difference, and so forth. Accordingly, it is actuallyvery difficult to stop etching just in time so as to achieve an openingdimension of tens of nanometers from a previously measured etching speedand a substrate thickness.

[0010] It is possible to obtain a desired small opening on the order of50 nm with high repeatability by using an SOI substrate, and using anSiO film embedded in the middle as a film for stopping etching from areverse side, as shown in FIGS. 5A through 5G. However, a thick fringeis produced around a surface on which the small opening is produced.Thereby, in this condition, it is not possible that the openingapproaches a recording medium to a distance of tens of nanometers.Therefore, it is necessary to remove this fringe. However, because athickness of a portion having the opening is on the order of 10 μm it islikely to be destroyed when or after the fringe is removed. In order toavoid such a situation, as shown in FIG. 6C or FIG. 7C, a thickness of aportion of a silicon substrate 72 in which an opening is provided ismade small. Then, as shown in FIG. 6E or FIG. 7E, a pattern of siliconoxide for performing etching for providing the opening is formed on abottom obtained by etching. Then, as shown in FIG. 6F or FIG. 7F, a hole75 is formed by anisotropic etching. However, in this case, as shown inFIG. 6E or FIG. 7E, when photo resist 74 is coated, because a leveldifference of hundreds of microns exists from a surrounding fringeportion, it is not possible to coat the photo resist uniformly, and toform the pattern of silicon oxide with high accuracy.

[0011] A plurality-of-projection probe provided in a near-field opticalmicroscope or a near-field optical recording optical head are made by amethod in which an array of a plurality of recesses is transferred, inthe related art, for example.

[0012] This near-field optical microscope or near-field opticalrecording optical head has a projection-type probe array arranged sothat a distance between each projection and a sample is smaller than awavelength of light used when the sample is measured. Thereby, thenear-field optical microscope can measure physical properties of thesample by generating an optical near-field between each projection andthe sample.

[0013] When the above-mentioned projection-type probe array ismanufactured, first, a recess array having a plurality of recesses ismade in an Si substrate as a result of anisotropic etching beingperformed on the Si substrate having a plane orientation of (100) planefor example. Then, the recesses are transferred onto another materialsuch as metal material or dielectric material for example using thethus-made recess array. At this time, a surface of the recess array iscovered by the material, such as metal or dielectric, other than Si.Then, the Si substrate is removed from the other material. Thereby, aprojection-type probe array provided with a plurality of projectionsmade of metal material or dielectric material is made.

[0014] The above-described projection-type probe array provided in thenear-field optical microscope is used in a condition in which a distancebetween each projection and a sample is equal to or smaller than awavelength of light. Therefore, it is important to control a height ofeach projection properly.

[0015] When a projection-type probe array is made as a result of arecess array being transferred onto a metal material or the like, aheight of each projection is, as shown in FIG. 8, determined by a depthof a recess 1001 of the recess array 1000. The depth of each recess 1001is determined by a width of the recess 1001 W=2H/tan 54.74°≈1.414Hbecause the recess 1001 is surrounded by an Si (111) plane. (The symbol‘≈’ signifies ‘is approximately equal to’.)

[0016] However, the width of each recess 1001 involves an error on theorder of approximately 10 nm due to variation in mechanical accuracyeven when an electronic-beam exposing device is used. Accordingly, it isnot possible to make uniform heights of respective projections of aprojection-type probe array made by using the recess array 1000.

[0017] Further, when a single-projection probe is made, theabove-mentioned problem involved in manufacturing of a projection-typeprobe array does not arise. However, the following problems arise.

[0018] First, a tip of a projection is not pointed, but, actually, isworked to a plane, and, thus, the projection is shaped as a truncatedcone or pyramid. When a truncated-cone-or-pyramid projection is made inthe related art, as shown in FIG. 9A, first, a truncated-cone-or-pyramidrecess 3001 is made. Then, as a result of this being transferred, aprojection is made. At this time, a planarity of a tip of the projectionreflects a planarity of a bottom of the above-mentioned recess. When therecess having a bottom surface 3002 is made, a time of anisotropicetching is controlled and the etching is stopped before the entirety ofthe plane constituting the recess 3001 becomes a (111) plane (no bottomsurface remains). In this case, a planarity of the bottom surface 3002may deteriorate much due to a hillock or the like produced.

[0019] A planarity equal to or less than λ/8 is needed for a tip of aprojection-type probe, assuming that a wavelength of light to be emittedis λ, for example. However, a planarity of the bottom surface 3002 ofthe recess 3001 made in the related art is far from reaching this.Accordingly, it is not possible to make a satisfactory projection-typeprobe by the related art.

[0020] Further, as shown in FIG. 9B, there is a case where an etch stoplayer 3003 is previously made, and a bottom surface 3002 is obtained,when a recess 3001 is made, without controlling a time of etching. Inthis case, because it is possible to obtain a satisfactory planarity ofthe etch stop layer 3003, it is possible to make a projection-type probesatisfactory in a planarity view point.

[0021] However, in this case, a diameter of an opening D of a projectionto be made is determined by an opening width W of the recess 3001 and adepth H of the recess 3001. The depth H has a sufficient accuracy in alocal planarity view point as described above. However, variation withina sheet of wafer or between wafers may be very large as much as on theorder of hundreds of nanometers.

[0022] Accordingly, when recesses 3001 are made to have uniform openingwidths W, diameters of bottom surfaces 3002 (that is, diameters ofopenings at tips of projections) vary depending on variation in depthsH.

[0023] In order to cope therewith, an opening width W may be made tochange correspondingly to a variation of a depth H. However, it is notpossible to measure a depth H precisely. Furthermore, it is not possibleto change a dimension of a photo mask, actually.

[0024] Thus, even manufacturing of a single-projection probe which doesnot need consideration of making uniform heights of a plurality ofprojections involves problems on dimension accuracy in the related art.

SUMMARY OF THE INVENTION

[0025] An object of the present invention is to provide anoptical-pickup slider and a manufacturing method thereof in which it ispossible to make an aperture, which is not likely to be destroyed, by asingle time of etching, with high accuracy and high repeatability.

[0026] Further, in an actual optical pickup-head slider 10, a ski 51 asshown in FIG. 10A or a pad 52 as shown in FIG. 10B is provided, for apurpose of smooth floating of the head without adhering a recordingmedium. Another object of the present invention is to make the ski 51 orpad 52 with high accuracy and high repeatability.

[0027] Furthermore, in an optical pickup-head slider, an aperture lessthan a wavelength of light used for generating an optical near-field andthe optical near-field generated only from the aperture as a result ofthe light being incident on the periphery thereof are used for readingand writing of marks on a recording medium. However, because a thicknessof a portion having the aperture is on the order of 10 μm, light may betransmitted by a portion surrounding the aperture by a condition of awavelength of the light. When the thus-transmitted light is incident ona recording medium, a dimension of each mark written there becomeslarger and a recording density comes to be lowered, and S/N of a readsignal comes to be lowered. Another object of the present invention isto solve these problems.

[0028] Another object of the present invention is to provide a probe anda manufacturing method thereof in which a dimensional accuracy isgreatly improved.

[0029] Another object of the present invention is to provide a probearray having high efficiency and high resolution, and heights ofrespective projections are controlled to be uniform.

[0030] Another object of the present invention is to manufacture a probearray having high efficiency and high resolution, controlling heights ofrespective projections to make them uniform.

[0031] An optical-pickup slider according to the present invention ischaracterized in that a light-transmitting-property substrate is bondedto a surface of a layer having a tapered through hole, on which surfacea larger opening of the tapered through hole exists. Thereby, it ispossible to prevent the layer having an aperture from being destroyed.

[0032] It is preferable that the light-transmitting-property substratehas a thickness at least ten times a thickness of the layer. Thereby, itis possible to prevent the light-transmitting-property substrate andlayer from being destroyed.

[0033] Further, it is preferable that glass or TiO₂ is used as amaterial of the light-transmitting-property substrate when a wavelengthof light to be incident is on the order of 2 μm to the order of 0.4 μm,but quarz glass, MgO, Al₂O₃, Y₂O₃ or diamond is used as a material ofthe light-transmitting-property substrate when a wavelength of light tobe incident is equal to or shorter than 0.4 μm. By thus changing thequality of material of the light-transmitting-property substrate inaccordance with a wavelength of light to be input to the optical-pickupslider, it is possible to increase light transmittance.

[0034] An optical-pickup slider according to another aspect of thepresent invention is characterized in that a film ofnon-light-transmitting-property material is provided at least on aninclined surface of the abovementioned tapered through hole. Thereby,even when light is applied to the inclined surface of the hole providingan aperture, the light is blocked by the film ofnon-light-transmitting-property material, and, thereby, it is possibleto generate only an optical near-field at the aperture on arecording-medium side. Thereby, it is possible to prevent a dimension ofa writing mark from increasing so as to prevent a recording density fromdecreasing, and to prevent an S/N ratio of a read signal fromdecreasing.

[0035] It is preferable that the film of non-light-transmitting-propertymaterial is made of metal or resistivity-lowered semiconductor. Thereby,it is possible to block light positively.

[0036] Further, it may be that the non-light-transmitting film is madeof eutectic of metal and the layer, or Si is used as a material of thelayer and the film of non-light-transmitting-property material is formedas a result of resistivity of at least the inclined surface of thetapered through hole being lowered. Thereby, it is possible to easilyform a light-blocking film and to block light positively.

[0037] An optical-pickup slider according to another aspect of thepresent invention comprises:

[0038] a first substrate;

[0039] a layer layered on the first substrate and having a thicknesssmaller than that of the first substrate,

[0040] wherein:

[0041] a tapered through hole is made in the layer; and

[0042] after a light-transmitting-property substrate is bonded to asurface of the layer, the first substrate is removed so that an apertureat a tip of the tapered through hole is exposed.

[0043] In this arrangement, because the tapered through hole is made inthe layer layered on the first substrate and having the thicknesssmaller than that of the first substrate, it is possible to make anaperture at a tip of the tapered through hole at high accuracy. Further,because the light-transmitting-property substrate is bonded to thesurface of this layer and the layer having the aperture is supported bythe light-transmitting-property substrate, the layer can be preventedfrom being destroyed. Furthermore, the first substrate is removed afterthe light-transmitting-property substrate is bonded to the surface ofthe layer, it is possible to stably expose the aperture with highdimensional accuracy at the tip of the tapered through hole of thelayer.

[0044] An optical-pickup slider according to another aspect of thepresent invention comprises:

[0045] a first substrate;

[0046] a layer layered on the first substrate and having a thicknesssmaller than that of the first substrate,

[0047] wherein:

[0048] a tapered through hole is made in the layer; and

[0049] after a light-transmitting-property substrate is bonded to asurface of the layer, the first substrate is removed, and, then, a skishape or a pad shape is made at a position of an aperture at a tip ofthe tapered through hole in the layer.

[0050] Thereby, it is possible to make the ski shape or pad shape athigh accuracy with high repeatability.

[0051] An optical-pickup slider according to another aspect of thepresent invention comprises:

[0052] a first substrate;

[0053] a layer layered on the first substrate and having a thicknesssmaller than that of the first substrate,

[0054] wherein:

[0055] a ski shape or a pad shape having a tapered through hole is madein the layer; and

[0056] after a light-transmitting-property substrate is bonded to asurface of the layer, the first substrate is removed so that an apertureat a tip of the tapered through hole is exposed.

[0057] Thereby, it is possible to make the high-accuracy ski shape orpad shape and the tapered through hole at the same time, and to simplifyprocesses so as to reduce a cost.

[0058] An optical-pickup slider according to another aspect of thepresent invention comprises:

[0059] a first substrate;

[0060] a layer layered on the first substrate and having a thicknesssmaller than that of the first substrate,

[0061] wherein:

[0062] a tapered through hole is made in the layer; and

[0063] after a film of a non-light-transmitting-property material isprovided on at least an inclined surface of the tapered through hole, alight-transmitting-property substrate is bonded to a surface of thelayer, and, after the first substrate is removed, a portion of thenon-light-transmitting-property material is removed at an aperture at atip of the tapered through hole so that the aperture is exposed.

[0064] By making the tapered through hole in the thin layer, and, afterproviding the film of the non-light-transmitting material at least onthe inclined surface extending from the aperture of the tapered throughhole, bonding the light-transmitting-property substrate to the surfaceof the layer, and removing the first substrate so as to expose theaperture at the tip of the tapered through hole, it is possible toeasily form the film of non-light-transmitting-property material on theinclined surface of the tapered through hole having the aperture, and toimprove a recording density and an S/N ratio of a read signal.

[0065] A method of manufacturing an optical-pickup slider according tothe present invention comprises the steps of:

[0066] a) making a tapered through hole in a layer layered on a firstsubstrate and having a thickness smaller than that of the firstsubstrate; and

[0067] b) after bonding a light-transmitting-property substrate to asurface of the layer, removing the first substrate so as to expose anaperture at a tip of the tapered through hole.

[0068] In this arrangement, because the tapered through hole is made inthe layer layered on the first substrate and having the thicknesssmaller than that of the first substrate, it is possible to make anaperture at a tip of the tapered through hole at high accuracy. Further,because the light-transmitting-property substrate is bonded to thesurface of this layer and the layer having the aperture is supported bythe light-transmitting-property substrate, the layer can be preventedfrom being destroyed. Furthermore, the first substrate is removed afterthe light-transmitting-property substrate is bonded to the surface ofthe layer, it is possible to stably expose the aperture with highdimensional accuracy at the tip of the tapered through hole of thelayer.

[0069] A method of manufacturing an optical-pickup slider according toanother aspect of the present invention comprises the steps of:

[0070] a) making a tapered through hole in a layer layered on a firstsubstrate and having a thickness smaller than that of the firstsubstrate; and

[0071] b) after bonding a light-transmitting-property substrate to asurface of the layer, removing the first substrate, and, then, making aski shape or a pad shape at a position of an aperture at a tip of thetapered through hole.

[0072] Thereby, it is possible to make the ski shape or pad shape athigh accuracy with high repeatability.

[0073] A method of manufacturing an optical-pickup slider according toanother aspect of the present invention comprises the steps of:

[0074] a) making a ski shape or a pad shape having a tapered throughhole in a layer layered on a first substrate and having a thicknesssmaller than that of the first substrate; and

[0075] b) after bonding a light-transmitting-property substrate to asurface of the layer, removing the first substrate so as to expose anaperture at a tip of the tapered through hole.

[0076] Thereby, it is possible to make the high-accuracy ski shape orpad shape and the tapered through hole at the same time, and to simplifyprocesses so as to reduce a cost.

[0077] A method of manufacturing an optical-pickup slider according toanother aspect of the present invention comprises the steps of:

[0078] a) making a tapered through hole in a layer layered on a firstsubstrate and having a thickness smaller than that of the firstsubstrate; and

[0079] b) after providing a film of a non-light-transmitting-propertymaterial on at least an inclined surface of the tapered through hole,bonding a light-transmitting-property substrate to a surface of thelayer, and, after removing the first substrate, removing a portion ofthe non-light-transmitting-property material at an aperture at a tip ofthe tapered through hole so as to expose the aperture.

[0080] By making the tapered through hole in the thin layer, and, afterproviding the film of the non-light-transmitting material at least onthe inclined surface extending from an aperture of the tapered throughhole, bonding the light-transmitting-property substrate to the surfaceof the layer, and removing the first substrate so as to expose theaperture at the tip of the tapered through hole, it is possible toeasily form the film of non-light-transmitting-property material on theinclined surface of the tapered through hole having the aperture, and toimprove a recording density and an S/N ratio of a read signal.

[0081] A method of manufacturing an optical-pickup slider according toanother aspect of the present invention comprises the steps of:

[0082] a) making a tapered through hole in a layer layered on a firstsubstrate and having a thickness smaller than that of the firstsubstrate; and

[0083] b) after forming eutectic of metal and the layer on at least aninclined surface of the tapered through hole, bonding alight-transmitting-property substrate to a surface of the layer,removing the first substrate so as to expose an aperture at a tip of thetapered through hole.

[0084] A method of manufacturing an optical-pickup slider according toanother aspect of the present invention comprises the steps of:

[0085] a) making a tapered through hole in an Si layer layered on afirst substrate and having a thickness smaller than that of the firstsubstrate; and

[0086] b) after lowering resistivity of a surface of at least aninclined surface of the tapered through hole, bonding alight-transmitting-property substrate to a surface of the layer,removing the first substrate so as to expose an aperture at a tip of thetapered through hole.

[0087] Thereby, it is possible to easily form the film ofnon-light-transmitting-property material on the inclined surface of thetapered through hole having the aperture.

[0088] A probe according to the present invention comprises:

[0089] a substrate having a property of transmitting light; and

[0090] a projecting portion formed on the substrate, and made of amaterial having a refractive index higher than that of the substrate,

[0091] wherein the projecting portion has light from the substrateincident thereon, and generates one of or both an optical near-field andpropagation light at a tip thereof.

[0092] In this arrangement, it is possible to greatly improve adimension accuracy of the tip of the projecting portion.

[0093] A method of manufacturing a probe according to the presentinvention comprises the steps of:

[0094] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising ahigh-refractive-index layer having a refractive index higher than thatof the first substrate, an intermediate layer layered on thehigh-refractive-index layer and a supporting layer layered on theintermediate layer, in a condition in which the first substrate is incontact with the high-refractive-index layer;

[0095] b) removing the supporting layer included in the secondsubstrate;

[0096] c) patterning by the intermediate layer exposed as a result ofthe supporting layer being removed;

[0097] d) etching the high-refractive-index layer using the patternedintermediate layer so as to form a cone-like or pyramid-like projectingportion on the first substrate; and

[0098] e) removing the patterned intermediate layer so that the probehaving the cone-like or pyramid-like projecting portion made from thehigh-refractive-index layer on the first substrate be obtained.

[0099] In this arrangement, it is possible to greatly improve adimension accuracy of a tip of the projecting portion.

[0100] A method of manufacturing a probe according to another aspect ofthe present invention comprises the steps of:

[0101] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a supporting layer,an intermediate layer formed on the supporting layer and a GaP layerformed on the intermediate layer, in a condition in which the firstsubstrate and the GaP layer are in contact with one another;

[0102] b) removing the supporting layer included in the secondsubstrate;

[0103] c) patterning by the intermediate layer exposed as a result ofthe supporting layer being removed;

[0104] d) etching the GaP layer using the patterned intermediate layerso as to form a cone-like or pyramid-like projecting portion on thefirst substrate; and

[0105] e) removing the patterned intermediate layer so that the probehaving the cone-like or pyramid-like projecting portion made from theGaP layer on the first substrate be obtained.

[0106] In this arrangement, it is possible to greatly improve adimension accuracy of a tip of the projecting portion.

[0107] A method of manufacturing a probe according to another aspect ofthe present invention comprises the steps of:

[0108] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a low-concentrationlayer having a refractive index higher than that of the first substrateand having a predetermined amount of impurities mixed therein and ahigh-concentration layer having impurities more than the predeterminedamount of impurities mixed therein, in a condition in which the firstsubstrate and the low-concentration layer are in contact with oneanother;

[0109] b) removing the high-concentration layer included in the secondsubstrate;

[0110] c) forming a patterning material on a surface of thelow-concentration layer exposed as a result of the high-concentrationlayer being removed and patterning by the patterning material;

[0111] d) etching the low-concentration layer exposed by the patterningso as to form a cone-like or pyramid-like projecting portion on thefirst substrate; and

[0112] e) removing the patterned patterning material so that the probehaving the cone-like or pyramid-like projecting portion made from thelow-concentration layer on the first substrate be obtained.

[0113] In this arrangement, it is possible to greatly improve adimension accuracy of a tip of the projecting portion.

[0114] A method of manufacturing a probe according to another aspect ofthe present invention comprises the steps of:

[0115] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a n-type Si layerhaving a refractive index higher than that of the first substrate and ap-type Si layer, in a condition in which the first substrate and then-type Si layer are in contact with one another;

[0116] b) removing the p-type Si layer included in the second substrate;

[0117] c) forming a patterning material on a surface of the n-type Silayer exposed as a result of the p-type Si layer being removed andpatterning by the patterning material;

[0118] d) etching the n-type Si layer using the patterned patterningmaterial so as to form a cone-like or pyramid-like projecting portion onthe first substrate; and

[0119] e) removing the patterned patterning material so that the probehaving the cone-like or pyramid-like projecting portion made from then-type Si layer on the first substrate be obtained.

[0120] In this arrangement, it is possible to greatly improve adimension accuracy of a tip of the projecting portion.

[0121] A method of manufacturing a probe according to another aspect ofthe present invention comprises the steps of:

[0122] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising ahigh-concentration p-type Si layer having a refractive index higher thanthat of the first substrate and an n-type Si layer, in a condition inwhich the first substrate and the high-concentration p-type Si layer arein contact with one another;

[0123] b) removing the n-type Si layer included in the second substrate;

[0124] c) forming a patterning material on a surface of thehigh-concentration p-type Si layer exposed as a result of the n-type Silayer being removed and patterning by the patterning material;

[0125] d) etching the high-concentration p-type Si layer using thepatterned patterning material so as to form a cone-like or pyramid-likeprojecting portion on the first substrate; and

[0126] e) removing the patterned patterning material so that the probehaving the cone-like or pyramid-like projecting portion made from thehigh-concentration p-type Si layer on the first substrate be obtained.

[0127] In this arrangement, it is possible to greatly improve adimension accuracy of a tip of the projecting portion.

[0128] A probe array according to the present invention comprises:

[0129] a substrate having a property of transmitting light; and

[0130] a plurality of projecting portions formed on the substrate, madeof a material having a refractive index higher than that of thesubstrate, and like cones or pyramids having tips, positions of whichare aligned,

[0131] wherein each of the plurality of projecting portions has lightfrom the substrate incident thereon, and generates one of or both anoptical near-field and propagation light at a tip thereof.

[0132] In this arrangement, it is possible to emit light at highefficiency with high resolution.

[0133] A method of manufacturing a probe array according to the presentinvention comprises the steps of:

[0134] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising ahigh-refractive-index layer having a refractive index higher than thatof the first substrate, an intermediate layer layered on thehigh-refractive-index layer and a supporting layer layered on theintermediate layer, in a condition in which the first substrate is incontact with the high-refractive-index layer;

[0135] b) removing the supporting layer included in the secondsubstrate;

[0136] c) patterning by the intermediate layer exposed as a result ofthe supporting layer being removed;

[0137] d) etching the high-refractive-index layer using the patternedintermediate layer so as to form a plurality of cone-like orpyramid-like projecting portions on the first substrate; and

[0138] e) removing the patterned intermediate layer so that the probearray having the plurality of cone-like or pyramid-like projectingportions made from the high-refractive-index layer on the firstsubstrate be obtained.

[0139] In this arrangement, it is possible to manufacture a probe arrayin which heights of respective projecting portions are controlled to beuniform by an intermediate layer.

[0140] A method of manufacturing a probe array according to anotheraspect of the present invention comprises the steps of:

[0141] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a supporting layer,an intermediate layer formed on the supporting layer and a GaP layerformed on the intermediate layer, in a condition in which the firstsubstrate and the GaP layer are in contact with one another;

[0142] b) removing the supporting layer included in the secondsubstrate;

[0143] c) patterning by the intermediate layer exposed as a result ofthe supporting layer being removed;

[0144] d) etching the GaP layer using the patterned intermediate layerso as to form a plurality of cone-like or pyramid-like projectingportions on the first substrate; and

[0145] e) removing the patterned intermediate layer so that the probearray having the plurality of cone-like or pyramid-like projectingportions made from the GaP layer on the first substrate be obtained.

[0146] In this arrangement, it is possible to manufacture a probe arrayin which heights of respective projecting portions are controlled to beuniform by an intermediate layer.

[0147] A method of manufacturing a probe array according to anotheraspect of the present invention comprises the steps of:

[0148] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a low-concentrationlayer having a refractive index higher than that of the first substrateand having a predetermined amount of impurities mixed therein and ahigh-concentration layer having impurities more than the predeterminedamount of impurities mixed therein, in a condition in which the firstsubstrate and the low-concentration layer are in contact with oneanother;

[0149] b) removing the high-concentration layer included in the secondsubstrate;

[0150] c) forming a patterning material on a surface of thelow-concentration layer exposed as a result of the high-concentrationlayer being removed and patterning by the patterning material;

[0151] d) etching the low-concentration layer using the patternedpatterning material so as to form a plurality of cone-like orpyramid-like projecting portions on the first substrate; and

[0152] e) removing the patterned patterning material so that the probearray having the plurality of cone-like or pyramid-like projectingportions made from the low-concentration layer on the first substrate beobtained.

[0153] In this arrangement, it is possible to manufacture a probe arrayin which heights of respective projecting portions are controlled to beuniform by a patterning material.

[0154] A method of manufacturing a probe array according to anotheraspect of the present invention comprises the steps of:

[0155] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a n-type Si layerhaving a refractive index higher than that of the first substrate and ap-type Si layer, in a condition in which the first substrate and then-type Si layer are in contact with one another;

[0156] b) removing the p-type Si layer included in the second substrate;

[0157] c) forming a patterning material on a surface of the n-type Silayer exposed as a result of the p-type Si layer being removed andpatterning by the patterning material;

[0158] d) etching the n-type Si layer using the patterned patterningmaterial so as to form a plurality of cone-like or pyramid-likeprojecting portions on the first substrate; and

[0159] e) removing the patterned patterning material so that the probearray having the plurality of cone-like or pyramid-like projectingportions made from the n-type Si layer on the first substrate beobtained.

[0160] In this arrangement, it is possible to manufacture a probe arrayin which heights of respective projecting portions are controlled to beuniform by a patterning material.

[0161] A method of manufacturing a probe array according to anotheraspect of the present invention comprises the steps of:

[0162] a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising ahigh-concentration p-type Si layer having a refractive index higher thanthat of the first substrate and an n-type Si layer, in a condition inwhich the first substrate and the high-concentration p-type Si layer arein contact with one another;

[0163] b) removing the n-type Si layer included in the second substrate;

[0164] c) forming a patterning material on a surface of thehigh-concentration p-type Si layer exposed as a result of the n-type Silayer being removed and patterning by the patterning material;

[0165] d) etching the high-concentration p-type Si layer using thepatterned patterning material so as to form a plurality of cone-like orpyramid-like projecting portions on the first substrate; and

[0166] e) removing the patterned patterning material so that the probearray having the plurality of cone-like or pyramid-like projectingportions made from the high-concentration p-type Si layer on the firstsubstrate be obtained.

[0167] In this arrangement, it is possible to manufacture a probe arrayin which heights of respective projecting portions are controlled to beuniform by a patterning material.

[0168] Other objects and further features of the present invention willbecome more apparent from the following detailed description when readin conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0169]FIG. 1 shows a perspective view of a slider in the related art;

[0170]FIG. 2 shows an arrangement of an optical system using a slider inthe related art;

[0171]FIG. 3 shows an elevational sectional view of a near-field probein the related art;

[0172]FIGS. 4A through 4G show a process chart of a process ofmanufacturing a near-field probe in the related art;

[0173]FIGS. 5A through 5G show a process chart of another process ofmanufacturing a near-field probe in the related art;

[0174]FIGS. 6A through 6G show a process chart of another process ofmanufacturing a near-field probe in the related art;

[0175]FIGS. 7A through 7G show a process chart of another process ofmanufacturing a near-field probe in the related art;

[0176]FIG. 8 shows an elevational sectional view of a recess-portionarray used for manufacturing a probe array in the related art;

[0177]FIGS. 9A and 9B show elevational sectional views of otherrecess-portion arrays used for manufacturing a probe array in therelated art;

[0178]FIGS. 10A and 10B show perspective views of sliders having skiesand pads;

[0179]FIGS. 11A through 11F show a process chart of a process ofmanufacturing a slider in a first embodiment of the present invention;

[0180]FIG. 12 shows an arrangement of an optical system employing theabove-mentioned slider in the first embodiment of the present invention;

[0181]FIGS. 13A through 13F show a process chart of a process ofmanufacturing a slider in a second embodiment of the present invention;

[0182]FIG. 14 roughly shows an etching arrangement for removing a p-typeSi layer in the second embodiment;

[0183]FIGS. 15A through 15E show a process chart of a process ofmanufacturing a slider in a third embodiment of the present invention;

[0184]FIGS. 16A through 16E show a process chart of a process ofmanufacturing a slider in a fourth embodiment of the present invention;

[0185]FIGS. 17A through 17D and 17E through 17H show a process chart ofa process of manufacturing a slider in a fifth embodiment of the presentinvention;

[0186]FIGS. 18A through 18D and 18E through 18H show a process chart ofa process of manufacturing a slider in a variant embodiment of the fifthembodiment of the present invention;

[0187]FIGS. 19A through 19E and 19F through 19J show a process chart ofa process of manufacturing a slider in a sixth embodiment of the presentinvention;

[0188]FIGS. 20A through 20E and 20F through 20J show a process chart ofa process of manufacturing a slider in a variant embodiment of the sixthembodiment of the present invention;

[0189]FIGS. 21A through 21H show a process chart of a process ofmanufacturing a slider in a seventh embodiment of the present invention;

[0190]FIGS. 22A through 22H show a process chart of a process ofmanufacturing a slider in an eighth embodiment of the present invention;

[0191]FIGS. 23A through 23H show a process chart of a process ofmanufacturing a slider in a ninth embodiment of the present invention;

[0192]FIGS. 24A through 24F show a process chart of a process ofmanufacturing a slider in a tenth embodiment of the present invention;

[0193]FIGS. 25A through 25H show a process chart of a process ofmanufacturing a slider in an eleventh embodiment of the presentinvention;

[0194]FIG. 26 shows an elevational sectional view showing an aperture ina twelfth embodiment of the present invention;

[0195]FIGS. 27A through 27F show a process chart of a process ofmanufacturing a slider in a thirteenth embodiment of the presentinvention;

[0196]FIG. 28A shows a plan view of a probe array in a fourteenthembodiment of to the present invention, and FIG. 28B shows anelevational sectional view of the probe array shown in FIG. 28A;

[0197]FIG. 29 shows an elevational sectional view of an Si projectingportion of the probe array according to the present invention;

[0198]FIG. 30 shows an elevational sectional view of an SOI substrateprepared for manufacturing the probe array according to the presentinvention;

[0199]FIG. 31 shows an elevational sectional view for illustrating thatthe SOI substrate and a glass substrate are bonded together by anodicbonding in manufacturing the probe array according to the presentinvention;

[0200]FIG. 32 shows an elevational sectional view for illustrating thatpatterning is performed by an SiO₂ layer in manufacturing the probearray according to the present invention;

[0201]FIG. 33 shows an elevational sectional view for illustrating thatetching is performed by an SOI wafer so that Si projecting portions anda bank portion are made in manufacturing the probe array according tothe present invention;

[0202]FIGS. 34A through 34D show side views showing a manufacturingprocess of forming the Si projecting portion by performing etching onthe SOI wafer in manufacturing the probe array according to the presentinvention (FIG. 34A showing a shape of an active layer obtained after180 seconds elapses from beginning of etching; FIG. 34B showing a shapeof the active layer obtained after 360 seconds elapses from thebeginning of etching; FIG. 34C showing a shape of the active layerobtained after 540 seconds elapses from the beginning of etching; andFIG. 34D showing a shape of the active layer obtained after 750 secondselapses from the beginning of etching);

[0203]FIG. 35 shows an elevational sectional view for illustrating thata metal layer is formed on the SOI layer and glass substrate inmanufacturing the probe array according to the present invention;

[0204]FIG. 36 shows an elevational sectional view of a probe array in afifteenth embodiment of the present invention;

[0205]FIGS. 37A through 37D show side views showing a manufacturingprocess of forming an Si projecting portion having a plurality ofinclinations by performing etching on an SOI wafer in manufacturing aprobe array in sixteenth embodiment of the present invention (FIG. 37Ashowing a shape of an active layer obtained after 60 seconds elapsesfrom beginning of etching; FIG. 37B showing a shape of the active layerobtained after 150 seconds elapses from the beginning of etching; FIG.37C showing a shape of the active layer obtained after 405 secondselapses from the beginning of etching; and FIG. 37D showing a shape ofthe active layer obtained after 483 seconds elapses from the beginningof etching);

[0206]FIG. 38A shows a relationship between a core diameter and anequivalent refractive index of an optical-fiber probe, and FIG. 38Bshows a relationship between a core diameter and a spot diameter of anoptical-fiber probe;

[0207]FIG. 39 shows a relationship between a detection position and anelectric-field intensity of an optical-fiber probe;

[0208]FIG. 40 shows a relationship between a core diameter, and anelectric-field intensity and a spot diameter of an optical-fiber probe;

[0209]FIGS. 41A through 41E show a process chart showing a process ofmanufacturing a probe array or a single probe in a seventeenthembodiment of the present invention;

[0210]FIG. 42A shows a measuring arrangement for measuring an opticalefficiency of a probe array according to the present invention, and FIG.42B shows a measuring arrangement for measuring an optical efficiency ofan optical-fiber probe;

[0211]FIG. 43 shows a relationship between a detection position and alight intensity of a optical near-field generated by an optical-fiberprobe by a solid line A and shows a relationship between a detectionposition and a light intensity of light detected by a probe arrayaccording to the present invention by a broken line B;

[0212]FIGS. 44A through 44G show a method of making a probe arrayemploying GaP (FIG. 44A showing that a single-crystal GaP wafer isbonded to a single-crystal Si wafer, FIG. 44B showing that a glasssubstrate and the single-crystal GaP wafer are bonded together, FIG. 44Cshowing that the single-crystal Si wafer is removed, FIG. 44D showingthat SiO₂ patterns are formed on the single-crystal GaP wafer, FIG. 44Eshowing that GaP projecting portions are formed, FIG. 44F showing thatthe SiO₂ patterns are removed, and FIG. 44G showing that a metal layeris formed) in an eighteenth embodiment of the present invention;

[0213]FIGS. 45A through 45H show a method of making a probe arrayemploying an Si wafer other than an SOI substrate (FIG. 45A showing asubstrate having an n-type Si layer formed on a p-type Si layer, FIG.45B showing that anodic bonding is performed so that a glass substratecomes into contact with a surface of the n-type Si layer, FIG. 45Cshowing that etching is performed after the p-type Si layer is removed,FIG. 45D showing that a pattern-forming layer is formed on a surface ofthe n-type Si layer, FIG. 45E showing that patterns are formed on then-type Si layer, FIG. 45F showing that etching is performed so that Siprojecting portions are formed, FIG. 45G showing that the patternsremaining on the Si projecting portions are removed and FIG. 45H showingthat a metal layer is formed on the glass substrate) in a nineteenthembodiment of the present invention;

[0214]FIG. 46 shows an etching arrangement for performingelectrochemical etching;

[0215]FIGS. 47A through 47H show a process chart of a process ofmanufacturing a probe array (FIG. 47A showing a substrate having alow-concentration Si layer formed on a high-concentration Si layer, FIG.47B showing that anodic bonding is performed so that a glass substratecomes into contact with a surface of the low-concentration Si layer,FIG. 47C showing that etching is performed after thehigh-concentration-Si layer is removed, FIG. 47D showing that apattern-forming layer is formed on a surface of the low-concentration.Si layer, FIG. 47E showing that patterns are formed on thelow-concentration Si layer, FIG. 47F showing that etching is performedso that Si projecting portions are formed, FIG. 47G showing that thepatterns are removed and FIG. 47H showing that a metal layer is formed)in a twelfth embodiment of the present invention;

[0216]FIGS. 48A through 48H show a process chart of a process ofmanufacturing a probe array (FIG. 48A showing a substrate having ahigh-concentration p-type Si layer formed on an n-type Si layer, FIG.48B showing that anodic bonding is performed so that a glass substratecomes into contact with a surface of the high-concentration p-type Silayer, FIG. 48C showing that etching is performed after the n-type Silayer is removed, FIG. 48D showing that a pattern-forming layer isformed on a surface of the high-concentration p-type Si layer, FIG. 48Eshowing that patterns are formed on the high-concentration p-type Silayer, FIG. 48F showing that Si projecting portions are formed, FIG. 48Gshowing that the patterns are removed and FIG. 48H showing that a metallayer is formed) in a twenty-first embodiment of the present invention;

[0217]FIGS. 49A and 49B show a probe array in a twenty-second embodimentof the present invention (FIG. 49A showing a plan view thereof and FIG.49B showing a side view thereof);

[0218]FIG. 50 shows a side view of a probe array in a twenty-thirdembodiment of the present invention;

[0219]FIGS. 51A and 51B show a probe array in a twenty-fourth embodimentof the present invention (FIG. 51A showing a plan view thereof and FIG.51B showing a side view thereof);

[0220]FIG. 52 shows a relationship between a mark length obtained whenrecording is performed on an optical disc by the probe array shown inFIGS. 51A and 51B and a CN ratio obtained when reproducing is performed;

[0221]FIGS. 53A and 53B show another example of a probe array in atwenty-fifth embodiment of the present invention (FIG. 53A showing aplan view thereof and FIG. 53B showing a side view thereof);

[0222]FIG. 54 is a block diagram showing a jumping-amount measuringarrangement which measures a jumping amount of a probe array; and

[0223]FIG. 55 shows jumping amounts of the probe arrays according to thepresent invention shown in FIGS. 51A, 51B, 52A and 52B.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0224] In an optical pickup-head slider in each embodiment of thepresent invention, a glass substrate is bonded to a side opposite to aside having an aperture of a single-crystal Si (silicon) layer having atapered hole passing therethrough, and thereby, the single-crystal Silayer having the aperture is prevented from being destroyed.

[0225] When this optical pickup-head slider is made, a tapered holepassing through a single-crystal Si layer is made by etching, thesingle-crystal Si layer being layered on a single-crystal Si substrate,having a (100) plane on a top side thereof and having a thicknesssmaller than that of the single-crystal Si substrate, a glass substrateis bonded to the surface of the single-crystal Si layer, and, then, thesingle-crystal Si substrate is removed so that an aperture of a tip ofthe tapered through hole of the single-crystal Si layer is exposed.

[0226]FIGS. 11A through 11F show a process of manufacturing an opticalpickup-head slider (being simply referred to as a slider, hereinafter)in a first embodiment of the present invention. As shown in FIG. 11A, aso-called SOI substrate obtained as a result of an SiO₂ layer 3 having athickness of approximately 1 μm and a single-crystal Si (silicon) layer4 having a (100) plane on the top side thereof and having a thickness ofapproximately 10 μm being layered on a single-crystal Si substrate 2having a thickness of hundreds of microns is used as a substrate 1. Onthe surface of the single-crystal Si layer 4, an SiO₂ layer 5 having athickness of hundreds of nanometers is layered. A portion of the SiO₂layer 5 at which an opening is to be made is removed byphotolithographic etching as shown in FIG. 11A. This portion of the SiO₂layer 5 to be removed has a dimension determined such that an openingdimension of a bottom surface of a hole in an interface between thesingle-crystal Si layer 4 and SiO₂ layer 3 will be in the range of tensof nanometers to hundreds of nanometers. For example, in a case where athickness of the single-crystal Si layer 4 is ‘t’ and a dimension of thebottom of the hole in the interface between the single-crystal Si layer4 and SiO₂ layer 3, that is, a dimension of a finally obtained apertureat which optical near-field is generated, is ‘a’, it is assumed that theopening is formed by alkaline crystal-axis anisotropic etching ofsilicon described later. In this case, the dimension D of the portion ofthe SiO₂ layer 5 to be removed is determined by the following equation.

D=(2t/tan 54.74°)+a

[0227] For example, when a thickness of the single-crystal Si layer 4 issuch that t=10 (μm), a dimension of the aperture is such that a=100(nm)=0.1 (μm), a dimension of the portion of the SiO₂ layer 5 to beremoved is such that D=14.24 (μm). Then, as shown in FIG. 11B, alkalineetching is performed on the single-crystal Si layer 4. As an etchant atthis time, a crystal-axis anisotropic etchant such as hydrazine(N₂H₄H₂O), KOH, NaOH, CaOH, EDP (EthyleneDiamine Pyrocatechol (water)),TMAH (TetraMethyl AmmoniumHydroxide), (CH₃)₄NOH) or the like. Atemperature of the etchant is to be on the order of 50° C. to 80° C. Bysuch a crystal-axis anisotropic etchant, a tapered hole 6 passingthrough the single-crystal Si layer 4 surrounded by a (111) plane isformed. When a tip of this hole 6 is made to just be on the SiO₂ layer3, a bottom surface of this hole 6 comes to have a square shape or arectangular shape. A dimension of the previous patterning of the topSiO₂ layer 5 is determined such that one side of the square orrectangular shape will have a dimension in the range of tens ofnanometers to hundreds of nanometers.

[0228] Then, as shown in FIG. 1C, the top SiO₂ layer is removed byhydrofluoric acid or the like. Then, as shown in FIG. 1D, alight-transmitting-property substrate, which is transparent for awavelength of light to be used, such as a glass layer 7 is placed on thesingle-crystal Si layer 4, and, electrodes 8 are pressed onto the bottomsurface of the single-crystal Si substrate 2 and the top surface of theglass layer 7. As a material of this light-transmitting-propertysubstrate, glass or TiO₂ is used when a wavelength of light to be usedis on the order of 2 μm to 0.4 μm, but quartz glass, MgO, Al₂O₃(sapphire), Y₂O₃, diamond or the like is used when a wavelength of lightto be used is equal to or smaller than 0.4 μm, for example. When glassis used as a material of the light-transmitting-property substrate,#7740 or #7070 made by Corning Incorporated, the United States ofAmerica, is used as the glass layer 7, for example, and, a thicknessthereof is at least in the range of 100 μm to several millimeters, andis larger than ten times that of the single-crystal Si layer 4. Whenthis glass layer 7 has a thickness equal to or smaller than 100 μm, itis easy to crack, and, thereby, an yield decreases. Then, in a conditionin which the thus-obtained combination is heated to 350° C. in anitrogen gas or in a vacuum, a positive voltage on the order of 300 V isapplied to the electrode 8 on the side of the single-crystal Sisubstrate 2 for a time on the order of 10 minutes. Thereby, it ispossible to bond the glass layer 7 to the single-crystal Si layer 4.Further, although the SiO₂ layer 3 which is an insulating layer existsbetween the single-crystal Si substrate 2 and single-crystal Si layer 4,a current flows therethrough or leaks therearound because thetemperature is high and the voltage is high, and thereby, a currentnecessary for the bonding flows. This bonding method is called anodicbonding.

[0229] After the glass layer 7 is bonded, the thus-obtained combinationis again immersed in the alkaline etchant, and, as shown in FIG. 1E, thesingle-crystal Si substrate 2 is removed by alkaline etching. As theetchant, KOH, for example, erodes not only silicon but also SiO₂ whichis a main component of glass. However, because the glass layer 7 is verythick, the entirety of the glass layer 7 is not eroded thereby. Further,because the single-crystal Si layer 4 and glass layer 7 are bondedtogether very firmly, the etchant does not enter therebetween.Accordingly, the single-crystal Si layer 4 is not eroded by the etching.Therefore, only the single-crystal Si substrate 2 is eroded by theetching. Further, because an etching rate of the SiO₂ layer 3 for thealkaline etchant is less than 1/100 of that of silicon, it is possiblethat etching is stopped when the single-crystal Si substrate 2 isremoved completely by the etching. Then, as shown in FIG. 11F, the SiO₂layer 3 is removed by hydrofluoric acid, and an aperture 9 is formed ata tip of the hole 6 of the single-crystal Si layer 4. Then, a dicing sawis used for cutting the thus-obtained combination and a slider 10 isobtained. When there is a possibility that chips produced at the time ofcutting by the dicing saw stop the aperture 9, in order to avoid such asituation, cutting by the dicing saw is performed before the SiO₂ layer3 is removed. In this case, it is possible to prevent chips fromstopping the aperture 9 because the SiO₂ layer 3 exists, and, after thecutting, the SiO₂ layer 3 is removed by hydrofluoric acid.

[0230] The thus-made slider 10 is used as follows: As shown in FIG. 12,laser light emitted by a light source 11 provided on the glass-layer-7side is gathered by a lens 12 and is incident on the aperture 9. Anear-field light 13 oozes out from the aperture 9 which is minute andequal to or smaller than a wavelength of the laser light, on the sideopposite to the glass layer 7, and it is possible to write a mark havinga size approximately equal to or smaller than the diameter of theaperture 9 onto a recording medium 14 which approaches the slider 10 toa distance approximately equal to the diameter of the aperture 9, andread such a mark.

[0231] The thus-made slider 10 has the following feature. An accuracy inthickness of the single-crystal Si layer 4 having a thickness of on theorder of tens of microns is far higher than an accuracy in thickness ofthe single-crystal Si substrate 2 having a thickness on the order ofhundreds of microns. Accordingly, it is possible to make the aperture 9with high dimensional accuracy. Further, when patterning is performedand a pattern is obtained from the SiO₂ layer 5 for making the aperture9, no puddle of resist is produced because no step exists in theperiphery, and, therefore, it is possible to form an opening with highaccuracy. Further, because the single-crystal Si layer 4 is supported bythe glass layer 7 having a thickness of hundreds of microns, it ispossible to prevent the single-crystal Si layer 4 having a thickness onthe order of tens of microns from being destroyed. Further, only asingle process of patterning by photolithographic etching is needed,and, processes are simplified and a cost can be saved.

[0232] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0233] In the above-described embodiment, an SOI substrate is used as asubstrate 1. A second embodiment in which a substrate other than an SOIsubstrate is used will now be described.

[0234] In the second embodiment, as shown in FIG. 13A, a substrate 21 isobtained as a result of an n-type Si layer 23 having a (100) plane onthe top side thereof and having a thickness of tens of microns beinglayered on a p-type Si substrate 22 having a thickness of hundreds ofmicrons, the substrate 21 having an SiO₂ layer 24 having a thickness ofhundreds of nanometers on the surface of the n-type Si layer 23. Aportion of the SiO₂ layer 24 at which an opening is formed is removed byphotolithographic etching, as shown in FIG. 13A. A dimension of thisportion of the SiO₂ layer 24 to be removed is determined such that anaperture dimension of a bottom surface of a hole in an interface betweenthe n-type Si layer 23 and p-type Si layer 22 will be in the range oftens of nanometers to hundreds of nanometers. A method of determining adimension of the portion of the SiO₂ layer 24 to be removed may be thesame as that used in making of the first embodiment. Then, as shown inFIG. 13B, etching is performed on the n-type Si layer 23 by alkalineetching. An etchant used at this time is a crystal-axis anisotropicetchant the same as that used in making the first embodiment. Atemperature of the etchant is in the range of 50° C. to 80° C. Thereby,a tapered hole 25 passing through the n-type Si layer 23 surrounded by a(111) plane is formed. When a tip of this hole 25 is made to just be ona boundary between the n-type Si layer 23 and p-type Si substrate 22,this hole 25 comes to have a square shape or a rectangular shape on theboundary, one side of the square or rectangular shape having a dimensionin the range of tens of nanometers to hundreds of nanometers. Adimension of the previous patterning of the top SiO₂ layer 24 isdetermined such that one side of the square or rectangular shape willhave a dimension in the range of tens of nanometers to hundreds ofnanometers.

[0235] Then, as shown in FIG. 13C, the top SiO₂ layer 24 is removed byhydrofluoric acid or the like. Then, as shown in FIG. 13D, a glass layer7 is placed on the n-type Si layer 23, and electrodes 8 are pressed ontothe bottom surface of the p-type Si substrate 22 and the top surface ofthe glass layer 7. #7740 or #7070 made by Corning Incorporated, theUnited States of America, for example, is used as the glass layer 7,and, a thickness thereof is on the order of 100 μm to severalmillimeters. Then, in a condition in which the thus-obtained combinationis heated to 350° C. in a nitrogen gas or in a vacuum, a positivevoltage on the order of 300 V is applied to the electrode 8 on thep-type Si substrate 22 for a time on the order of 10 minutes. Thereby,the glass layer 7 is bonded to the n-type Si layer 23.

[0236] After this glass layer 7 is bonded, the thus-obtained combinationis immersed in the alkaline etchant again, and, as shown in FIG. 13E,the p-type Si substrate 22 is removed by the alkaline etchant. At thistime, etching is performed, a voltage being applied between the n-typeSi substrate 23 and a reference electrode 26 placed in the etchant. Anarrangement for this etching is roughly shown in FIG. 14. Specifically,an Si wafer 27 having the glass layer 7 bonded thereto is immersed in anetchant such as hydrazine (N₂H₄.H₂O), KOH, or the like, for example.Then, a voltage is applied between the Si wafer 27 and the referenceelectrode 26 made of Pt and etching is performed, while the etchant isheated by a heater 29 and is stirred. Such a method of etching is calledelectrochemical etching. By this etching, the p-type Si substrate 22 isremoved. KOH, for example, erodes not only silicon but also SiO₂ whichis a main component of glass. However, because the glass layer 7 is verythick, the entirety of the glass layer 7 is not eroded. Further, becausethe n-type Si layer 23 and glass layer 7 are bonded together veryfirmly, the etchant does not enter therebetween. Accordingly, the n-typeSi layer 23 is not eroded by the etching. Therefore, only the p-type Sisubstrate 22 is eroded by the etching. Further, in electrochemicaletching, etching hardly advances further when the n-type Si layer 23 isexposed. Accordingly, it is possible for etching to stop when the p-typeSi substrate 22 is completely eroded by the etching. Then, as shown inFIG. 13F, the thus-obtained combination is cut by a dicing saw to adesired size and a slider 10 having an aperture 9 is obtained.

[0237] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0238] A third embodiment in which a substrate obtained as a result of alow-concentration p-type or n-type Si layer being layered on ahigh-concentration p-type or n-type Si substrate is used will now bedescribed making reference to a process chart shown in FIGS. 15A through15E.

[0239] As shown in FIG. 15A, a substrate 31 is obtained as a result of alow-concentration p-type or n-type Si layer 33 having a (100) plane onthe top side thereof and having a thickness of tens of microns beinglayered on a high-concentration p-type or n-type Si substrate 32 havinga thickness of hundreds of microns, the substrate 31 having an SiO₂layer 34 having a thickness of hundreds of nanometers on the surface ofthe low-concentration Si layer 33. Here, it is important that respectiveimpurity concentrations of the high-concentration Si substrate 32 andlow-concentration Si layer 33 are high and low. Any combinations ofp-type Si and n-type Si are possible, however, it is preferable that thelow-concentration Si layer 33 is of n-type Si. A reason therefor isthat, when a glass layer 7 is bonded by anodic bonding, bonding can beeasily made when a p-n junction is forwardly biased at a time of voltagebeing applied. Further, the impurity concentration of thehigh-concentration Si substrate 32 should be higher than approximately10¹⁷/cm³, and the impurity concentration of the low-concentration Silayer 33 should be equal to or lower than approximately 10¹⁷/cm³.

[0240] A portion of the SiO₂ layer 34 at which an aperture will be madeis removed by photolithographic etching as shown in FIG. 15A. Adimension of the portion of the SiO₂ layer 34 to be removed isdetermined such that a dimension of the aperture is in the range of tensof nanometers to hundreds of nanometers. Then, as shown in FIG. 15B,etching is performed on the low-concentration Si layer 33 by alkalineetching. An etchant at this time, the crystal-axis anisotropic etchantsame as that used in making the above-described first and secondembodiment is used. A temperature of the etchant is in the range of 50°C. to 80° C. Thereby, a tapered hole 5 passing through thelow-concentration Si layer 33 surrounded by a (111) plane is obtained.When a tip of the hole 35 comes to be on a boundary between thelow-concentration Si layer 33 and high-concentration Si substrate 32,the hole 35 has a square or rectangular shape on the boundary, adimension of one side of the square or rectangular shape being in therange of tens of nanometers to hundreds of nanometers. A dimension ofthe previous patterning of the top SiO₂ layer 34 is determined such thatone side of the square or rectangular shape of the hole 35 on theboundary will have a dimension in the range of tens of nanometers tohundreds of nanometers.

[0241] Then, as shown in FIG. 15C, the top SiO₂ layer 34 is removed byhydrofluoric acid or the like. Then, as shown in FIG. 15D, a glass layer7 is placed on the low-concentration Si layer 33, and electrodes 8 arepressed onto the bottom surface of the high-concentration Si substrate32 and the top surface of the glass layer 7. Then, a voltage is appliedto the electrodes 8, and, thus, the glass layer 7 is bonded to thelow-concentration Si layer 33 by anodic bonding.

[0242] After the glass layer 7 is bonded, the thus-obtained combinationis immersed in a hydrofluoric-acidand-nitric-acid etchant. A compositionof the etchant is as follows: HF:HNO₃:H₂O=1:3:8 (volume ratio) orHF:HNO₃:CH₃COOH=1:3:8. (volume ratio). When this etchant is used, anetching rate is lowered to 1/150, in a case where an impurityconcentration of Si is lower than 10¹⁷/cm³, of that in a case where animpurity concentration Si is higher than 10¹⁷/cm³. This etchant erodesnot only silicon but also SiO₂ which is a main component of glass.However, because the glass layer 7 is very thick, the entirety of theglass layer 7 is not eroded. Further, because the low-concentration Silayer 33 and glass layer 7 are bonded together very firmly, the etchantdoes not enter therebetween. Accordingly, the low-concentration Si layer33 is not eroded by the etching. Therefore, only the high-concentrationSi substrate 32 is eroded by the etching. Although thehigh-concentration Si substrate 32 is removed by etching and thus thelow-concentration Si layer 33 is exposed, the etching hardly advancesfurther. Accordingly, it is possible for etching to stop when thehigh-concentration Si substrate 32 is completely eroded by the etching.Then, as shown in FIG. 15E, the thus-obtained combination is cut by adicing saw to a desired size and a slider 10 having an aperture 9 isobtained.

[0243] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0244] A fourth embodiment employing a substrate obtained as a result ofa high-concentration p-type Si layer being layered on an n-type Sisubstrate will now be described making reference to a process chartshown in FIGS. 16A through 16E.

[0245] As shown in FIG. 16A, a substrate 41 is obtained as a result of ahigh-concentration p-type Si layer 43 having a (100) plane on the topside thereof and having a thickness of tens of microns being layered onan n-type Si substrate 42 having a thickness of hundreds of microns, thesubstrate 41 having an SiO₂ layer 44 having a thickness of hundreds ofnanometers on the surface of the high-concentration p-type Si layer 43.The high-concentration p-type Si layer 43 has an impurity concentrationhigher than approximately 10²⁰/cm³ when KOH is used for etching of then-type Si substrate 42, however, has an impurity concentration higherthan approximately 10¹⁹/cm³ when EDP is used for etching of the n-typeSi substrate 42.

[0246] Then, a portion of the SiO₂ layer 44 at which an aperture will bemade is removed by photolithographic etching as shown in FIG. 16A. Adimension of this portion of the SiO₂ layer 44 to be removed isdetermined such that a dimension of the aperture will be in the range oftens of nanometers to hundreds of nanometers. Then, as shown in FIG.16B, etching is performed on the high-concentration p-type Si layer 43by a hydrofluoricacid-and-nitric-acid etchant or RIE. Thereby, a reversetruncated cone or pyramid shaped hole 45 surrounded by a (111) plane isobtained. The etching is performed so that aperture having a dimensionof tens of nanometers to hundreds of nanometers is obtained on aboundary between the high-concentration p-type Si layer 43 and n-type Sisubstrate 42 at a tip of this hole 45.

[0247] Then, as shown in FIG. 16C, the top SiO₂ layer 44 is removed byhydrofluoric acid or the like. Then, a portion of the n-type Sisubstrate 42 is removed and an electrode 46 is formed so that a voltageis applied to the high-concentration p-type Si layer 43 at a time ofanodic bonding. Then, as shown in FIG. 16D, a glass layer 7 is placed onthe high-concentration p-type Si layer 43, and electrodes 8 are pressedonto the bottom surface of the electrode 46 and the top surface of theglass layer 7. Then, a voltage is applied to the electrodes 8, and,thus, the glass layer 7 is bonded to the high-concentration p-type Silayer 43 by anodic bonding. Then, the electrode 46 is removed, and, thethus-obtained combination is immersed in an alkaline etchant, the n-typeSi substrate 42 being thereby removed by etching. In this etching,etching hardly advances further when the high-concentration p-type Silayer 43 is exposed. Accordingly, it is possible for etching to stopwhen the n-type Si substrate 42 is completely eroded by the etching.Then, as shown in FIG. 16E, the thus-obtained combination is cut by adicing saw to a desired size and a slider 10 having an aperture 9 isobtained.

[0248] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0249] A fifth embodiment in which a ski or a pad is made on a slider 10in each of the above-described embodiments will now be described makingreference to the process chart shown in FIGS. 11A through 11F and aprocess chart shown in FIGS. 17A through 17D, 17E through 17H, 18Athrough 18D and 18E through 18H.

[0250] The single-crystal Si substrate 2 is removed by etching with thealkaline etchant in the first embodiment shown in FIG. 11E for example,and, then, in a condition in which, as shown in FIGS. 17A and 17E, theSiO₂ layer 3, single-crystal Si layer 4 having the hole 6 and glasslayer 7 are layered, patterning is performed and a pattern is obtainedfrom the SiO₂ layer 3, as shown in FIGS. 17B and 17F, so that a shape ofa ski will be obtained. Then, as shown in FIGS. 17C and 17G, etching isperformed on the single-crystal Si layer 4 by an alkaline etchant, and ashape of a ski 51 is formed. An etchant used for forming the shape ofthe ski 51 is not necessary to be an alkaline etchant as long as theetchant can erode the single-crystal Si layer 4. Then, as shown in FIGS.17D and 17H, the SiO₂ layer 3 is removed, and, thus, the ski 51 havingan aperture 9, a dimension of one side thereof being in the range oftens of nanometers to hundreds of nanometers can be obtained. Thus, itis possible to provide the aperture 9 at a position nearest to arecording medium 14. Thereby, it is possible to increase an efficiencyin coupling of a optical near-field to the recording medium 14.

[0251] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0252] The fifth embodiment is such that the ski 51 is made. However, itis also possible to make a pad 52 shown in FIG. 10B in the same manner,as shown in FIGS. 18A through 18D and 18E through 18H.

[0253] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the this embodiment.

[0254] Further, the fifth embodiment is such that the first embodimentis applied to. However, it is also possible to apply the aspect of thefifth embodiment to any one of the second, third and fourth embodimentsin the same manner.

[0255] In the fifth embodiment, the glass layer 7 is bonded after thehole 6 providing the aperture 9 is formed, and, then, the ski 51 isformed. However, it is also possible to form the hole 6 providing theaperture 9 and the ski at the same time. A sixth embodiment in which ahole 6 providing an aperture 9 and a ski 51 are formed simultaneouslywill now be described making reference to a process chart shown in FIGS.19A through 19E and 19F through 19J and the process chart shown in FIGS.11A through 11F.

[0256] As shown in FIGS. 19A and 19F, a so-called SOI substrate is used,obtained as a result of an SiO₂ layer 3 having a thickness ofapproximately 1 μm and a single-crystal Si layer 4 having a (100) planeon the top side thereof and having a thickness of approximately 10 μmbeing layered on a single-crystal. Si substrate 2 having a thickness ofhundreds of microns, and, an SiO₂ layer 5 of the substrate 1 which hasthe SiO₂ layer 5 having a thickness of hundreds of nanometers on thesurface of the single-crystal Si layer 4 is partially removed byphotolithographic etching for making a ski. At the same time, the SiO₂layer 5 is removed at a portion at which an aperture 9 will be made.Then, as shown in FIGS. 19B and 19G, etching is performed on thesingle-crystal Si layer 4 by alkaline etching. Thereby, a shape of theski 51 surrounded by a (111) plane is obtained. Further, as shown inFIG. 11B, a tapered hole 6 passing through the single-crystal Si layer 4surrounded by a (111) plane is obtained. Then, as shown in FIGS. 19C and19H, the top SiO₂ layer 5 is removed. Then, as shown in FIGS. 19D and19I, a glass layer 7 is bonded to the single-crystal Si layer 4 byanodic bonding, then, as shown in FIGS. 19E and 19J, the single-crystalSi substrate 2 is removed by alkaline etching, and, thus, the ski 51having the aperture 9 is made. Thus, it is possible to make the aperture9 and ski 51 with high accuracy.

[0257] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0258] The sixth embodiment is such that the ski 51 is made. However, itis also possible to make a pad 52 shown in FIG. 10B in the same manner,as shown in FIGS. 20A through 20E and 20F through 20J.

[0259] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in this embodiment.

[0260] Further, the fifth embodiment is such that the first embodimentis applied to. However, it is also possible to apply the aspect of thefifth embodiment to any one of the second, third and fourth embodimentsin the same manner.

[0261] A seventh embodiment in which a non-light-transmitting-propertymaterial is formed around an aperture 9 in a slider 10 so that light isprevented from being transmitted by a portion surrounding the aperture 9will now be described making reference to a process chart shown in FIGS.21A through 21H.

[0262] As shown in FIG. 21A, a so-called SOI substrate is used, obtainedas a result of an SiO₂ layer 3 having a thickness of approximately 1 μmand a single-crystal Si layer 4 having a (100) plane on the top sidethereof and having a thickness of approximately 10 μm being layered on asingle-crystal Si substrate 2 having a thickness of hundreds of microns,and, a portion of an SiO₂ layer 5 of the substrate 1 which has the SiO₂layer 5 having a thickness of hundreds of nanometers on the surface ofthe single-crystal Si layer 4 is removed by photolithographic etching,at which portion an aperture 9 will be made. Then, as shown in FIG. 21B,etching is performed on the single-crystal Si layer 4 by alkalineetching, and, thus, a tapered hole 6 passing through the single-crystalSi layer 4 surrounded by a (111) plane is formed. Then, as shown in FIG.21C, a light-blocking film 53, which does not transmit light having awavelength to be used, is formed on the surfaces of the SiO₂ layer 5 andhole 6 by a metal such as Au, Al, Cr, Ni or the like or a semiconductorhaving resistivity thereof lowered. Then, as shown in FIG. 21D, apositive photo-resist 54 is coated thereon. The thus-coated photo-resist54 collects in the hole 6 thickly. Then, after prebake is performedthereon, the entire surface undergoes exposure and, then, development isperformed thereon. At this time, because the photo-resist 54 collectingin the hole 6 is remarkably thick in comparison to a planar portion, andthe planar portion has a thickness equal to or smaller than 1 μm, lightdoes not reach a bottom of the hole 6, and, photo-resist remains evenafter the development. In this condition, as shown in FIG. 21E, thelight-blocking film 53 and SiO₂ layer 5 is removed by etching. In thisetching, the light-blocking film 53 is left without being removed at aportion at which the photo-resist 54 exists in the hole 6. After thephoto-resist 54 existing in the hole 6 is removed by an asher or apeeling agent, a glass layer 7 which is a light-transmitting-propertysubstrate is bonded to the single-crystal Si layer 4, as shown in FIG.21F. Then, as shown in FIG. 21G, the single-crystal Si substrate 2 isremoved by alkaline etchant, and the SiO₂ layer 3 is removed. Then, thethus-obtained combination is immersed in an etchant for removing thelight-blocking film 53. Then, etching is stopped when the light-blockingfilm 53 is removed at an aperture 9. Thus, as shown in FIG. 21H, aslider 10 having a light-blocking film 53 on an inclined surfaceextending from the aperture 9 can be made.

[0263] Accordingly, when light is incident on the inclined surface ofthe hole 6 providing the aperture 9 as shown in FIG. 12, thelight-blocking film 53 prevents the incident light from beingtransmitted, and, thereby, only an optical near-field at the aperture 9is generated on the recording-medium-14 side. As a result, it can beprevented that a dimension of a mark written on the recording medium 14increases and a recording density decreases, or an S/N ratio of a readsignal decreases. Further, instead, it is also possible that thelight-blocking film 53 exists between the single-crystal Si layer 4 andglass layer 7 which is a light-transmitting-property substrate orbetween the SiO₂ layer 5 and glass layer 7 as long as no problem occursin bonding between the glass layer 7 and single-crystal Si layer 4.

[0264] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0265] An eighth embodiment in which a non-light-transmitting film isformed, on an inclined surface extending from an aperture 9 in a slider10, of a material which forms eutectic with a single-crystal Si layer 4,and light is prevented from being transmitted by the inclined surfaceextending from the aperture 9, will now be described making reference toa process chart shown in FIGS. 22A through 22H.

[0266] As shown in FIG. 22A, a so-called SOI substrate is used, obtainedas a result of an SiO₂ layer 3 having a thickness of approximately 1 μmand a single-crystal Si layer 4 having a (100) plane on the top sidethereof and having a thickness of approximately 10 μm being layered on asingle-crystal Si substrate 2 having a thickness of hundreds of microns,and, a portion of an SiO₂ layer 5 of the substrate 1 which has the SiO₂layer 5 having a thickness of hundreds of nanometers on the surface ofthe single-crystal Si layer 4 is removed by photolithographic etching,at which portion an aperture 9 will be made. Then, as shown in FIG. 22B,etching is performed on the single-crystal Si layer 4 by alkalineetching, and, thus, a tapered hole 6 passing through the single-crystalSi layer 4 surrounded by a (111) plane is formed. Then, as shown in FIG.22C, a material, which can form eutectic with the single-crystal Silayer 4, for example, gold (Au) 55, is deposited on the surfaces of theSiO₂ layer 5 and hole 6. Then, the silicon and gold 55 on an inclinedsurface form eutectic in a nitrogen gas at 385° C. for 30 minutes. Then,as shown in FIG. 22D, the gold 55 is removed by etching, and only agold-and-silicon eutectic layer 56 on the inclined surface is left.Then, as shown in FIG. 22E, the SiO₂ layer 5 is removed by hydrofluoricacid or the like. Then, as shown in FIG. 22F, a glass layer 7 which is alight-transmitting-property substrate is bonded to the single-crystal Silayer 4 by anodic bonding. Then, as shown in FIG. 22G, thesingle-crystal Si substrate 2 is removed by alkaline etchant. Then, asshown in FIG. 22H, the SiO₂ layer 3 is removed. Thus, a slider 10 havingthe gold-and-silicon eutectic layer 56 on the inclined surface extendingfrom the aperture 9 can be made.

[0267] Because the gold-and-silicon eutectic layer 56 does not transmitlight, when light is incident on the inclined surface of the hole, 6providing the aperture 9, the gold-and-silicon eutectic layer 56prevents the incident light from being transmitted, and, thereby, onlyan optical near-field at the aperture 9 is generated on therecording-medium-14 side.

[0268] In the above-described embodiment, the gold-and-silicon eutecticlayer 56 is used for preventing light incident on the inclined surfaceof the hole 6 providing the aperture 9 from being transmitted. However,an eutectic layer of aluminum and silicon can also be used forpreventing light incident on an inclined surface of a hole providing anaperture from being transmitted. In this case, after aluminum isdeposited on the inclined surface, the aluminum and silicon are causedto form eutectic in a mixture gas of hydrogen and nitrogen at 700 to800° C. for 40 to 50 minutes, and, thus, the eutectic layer of aluminumand silicon is formed.

[0269] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0270] A ninth embodiment in which resistivity of a single-crystal Silayer 4 of an inclined surface extending from an aperture 9 in a slider10 is lowered, and light is prevented from being transmitted by theinclined surface extending from the aperture 9, will now be describedmaking reference to a process chart shown in FIGS. 23A through 23H.

[0271] As shown in FIG. 23A, a so-called SOI substrate is used, obtainedas a result of an SiO₂ layer 3 having a thickness of approximately 1 μmand a single-crystal Si layer 4 having a (100) plane on the top sidethereof and having a thickness of approximately 10 μm being layered on asingle-crystal Si substrate 2 having a thickness of hundreds of microns,and, a portion of a SiO₂ layer 5 of the substrate 1 which has the SiO₂layer 5 having a thickness of hundreds of nanometers on the surface ofthe single-crystal Si layer 4 is removed by photolithographic etching,at which portion an aperture 9 will be made. Then, as shown in FIG. 23B,etching is performed on the single-crystal Si layer 4 by alkalineetching, and, thus, a tapered hole 6 passing through the single-crystalSi layer 4 surrounded by a (111) plane is formed. Then, as shown in FIG.23C, impurities which lower resistivity of silicon, for example, boron,phosphorus, or arsenic, is doped in an inclined surface of the taperedhole 6 passing through the single-crystal Si layer 4. Thus, as shown inFIG. 23D, a silicon low-resistivity layer 57 is formed on the inclinedsurface of the tapered hole 6 passing through the single-crystal Silayer 4. Silicon having low; resistivity has a remarkably lowtransmittance in comparison to a portion having large resistivity, andtherefor acts as a light-blocking film. Then, as shown in FIG. 23E, theSiO₂ layer 5 is removed by hydrofluoric acid or the like. Then, as shownin FIG. 23F, a glass layer 7 which is a light-transmitting-propertysubstrate is bonded to the single-crystal Si layer 4 by anodic bonding.Then, as shown in FIG. 23G, the single-crystal Si substrate 2 is removedby alkaline etchant. Then, as shown in FIG. 23H, the SiO₂ layer 3 isremoved. Thus, a slider 10 having the silicon low-resistivity layer 57on the inclined surface extending from the aperture 9 can be made.

[0272] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0273] In the above-described embodiments, the glass layer 7 is bondedto the Si layer by anodic bonding. However, it is not necessary to limitto anodic bonding in particular. It is also possible to employ directbonding in normal temperature, instead. Normal-temperature bonding isperformed as follows: A mirror-polished silicon wafer, glass substrateand/or metal substrate are cleaned by so-called RCA cleaning, an argonFAB (Fact Atom Beam) is incident on each of two substrates for a time onthe order of 300 seconds at the same time in a vacuum chamber, and,then, they are pressed and connected together by a pressure of 10 MPa. Abonding strength thereof after they are brought into the atmospheric isequal to or higher than 12 MPa.

[0274] Further, it was mentioned that #7740 or #7070 made by CorningIncorporated, the United States of America, is used as the glass layer7. However, it is not necessary to limit thereto in particular. Whendirect bonding is employed, a quarz substrate or a light-transmittingresin can be used instead. In particular, when a quarz substrate isused, it is possible to bond a light-transmitting-property substrate andan Si substrate together by high-temperature direct bonding. In thismethod, substrate surfaces are sufficiently cleaned, dusts and stainsare removed therefrom, and they are dried. Then, in a normal atmosphere,the surfaces are caused to come into contact with one another. Then,annealing in a temperature equal to or higher than 300° C. is appliedthereto in a nitrogen gas, and, thus, the substrates are bondedtogether. Further, it is also possible to bond an Si layer and alight-transmitting-property substrate together by glass bonding usinglow-melting-point glass (frit glass).

[0275] Furthermore, it is also possible to bond an Si layer and alight-transmitting-property substrate together by an adhesive. In thiscase, it is possible that a glass substrate is used as thelight-transmitting-property substrate, and an optical adhesive (forexample, V40-J91 of Suruga Seiki Co., Ltd.) having a refractive indexthe same as that of glass is used. In this case, by performing bondingin a manner such that a space which will be formed between a glasssurface and an aperture after the bonding will be filled with anadhesive having a refractive index higher than that of the air, it ispossible to make a beam spot incident on the aperture to be small incomparison to a case where the space is not filled with the adhesive.Accordingly, it is possible to increase a coupling efficiency with whichlight emitted by a laser light source 11 becomes an optical near-field13 and reaches a recording medium 14.

[0276] Further, a substrate in which an aperture is formed is notnecessary to be limited to a single-crystal Si substrate. As long as anaperture 9 having a dimension in the range of tens of nanometers tohundreds of nanometers can be achieved, a compound semiconductor, aglass substrate having a light-blocking film, a resin substrate or ametal substrate can be used, instead.

[0277] In each of many ones of the above-described embodiments, theaperture 9 generating an optical near-field is formed as a result of thetapered hole 6 passing through the single-crystal Si layer 4 beingformed by crystal-axis anisotropic etching. However, in order to achieveobjects and advantages of the present invention, it is not necessary tobe limited to the tapered passing-through hole 6. For example, as shownin FIGS. 24A through 24F, it is possible that a hole 6 a having a wallshaped to be like an approximately parabolic surface is formed in asingle-crystal Si layer 4. Such a hole 6 a having a wall shaped to belike an approximately parabolic surface can be made as a result ofetching being performed using hydrofluoric acid and nitric acid(HF:HNO₃:CH₃COOH=1:3:5), for example, as an etching agent. The shapes ofthe holes 6 and 6 a are not necessary to be limited to those, and anyshape of a hole can be employed as long as an aperture 9 can be formedby the hole.

[0278] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in the above-describedembodiment.

[0279] Further, as shown in FIGS. 25A through 25H, it is possible that ahole 6 a having a shape other than a tapered shape, and a light-blockingfilm 53 is formed on an inclined surface thereof. For example, after thehole 6 a having an approximately parabolic surface is formed, thelight-blocking film 53 is formed on the inclined surface thereof. Whenthe hole 6 a has the approximately parabolic shape as shown in FIGS. 24Athrough 24F and 25A through 25H, light incident on the hole 6 a isreflected by the inclined surface of the hole 6 a repeatedly and isdirected to an aperture 9, and an optical near-field is emitted from theaperture 9. When the hole 6 a has such a shape, light reflected by theinclined surface thereof is gathered to the aperture 9. Therefore, it ispossible to use light incident on the hole 6 a as an optical near-fieldwith high efficiency.

[0280] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in each of theseembodiments.

[0281] Further, as shown in FIG. 26, it is possible that a hemisphericlens 80 is provided in an aperture 9. When the hemispheric lens 80 isthus provided and a hole 6 a has an approximately parabolic shape, lightincident on the hole 6 a is repeatedly reflected by an inclined surfacethereof, and is incident on the hemispheric lens 80. Light incident onthe hemispheric lens 80 is gathered by the hemispheric lens 80, isdirected to and then is emitted from the aperture 9. As a result oflight being gathered by the hemispheric lens 80 and an opticalnear-field being emitted from the aperture 9, it is possible to uselight incident on the hole 6 a as an optical near-field with higherefficiency.

[0282] As the glass layer 7, SW-3 made by Asahi Techno Glass Corporation(Iwaki Glass) or the like may also be used, in this embodiment.

[0283] Each embodiment described above is an optical-pickup slider whichemits an optical near-field. However, by the same manufacturing method,it is possible to manufacture an optical-pickup slider which emits lightby the interference of the modes. Further, it is possible to manufacturea nozzle of an ink-jet printer by the same method.

[0284] Further, in each embodiment described above, a glass layer 7 isbonded to a single-crystal Si layer 4. However, it is also possible thata non-light-transmitting-property substrate having a hole transmittinglight at a position corresponding to a hole 6, 6 a formed in asingle-crystal Si layer is bonded to the single-crystal Si layer 4. Forexample, as shown in FIGS. 27A through 27F, after a hole 6 is formed ina single-crystal Si layer 4, a non-light-transmitting-property substrate82 having a hole 81 formed therein at a predetermined positionpreviously is bonded to the single-crystal Si layer 4. Any material suchas metal, ceramic, resin, non-light-transmitting glass, or the like canbe employed as a material of this non-light-transmitting-propertysubstrate 82 as long as it can be bonded to the single-crystal Si layer4. SW-3 made by Asahi Techno Glass Corporation (Iwaki Glass) or the likemay also be used as the glass layer 7. Further, any of various bondingmethods described above as well as anodic bonding can be employed as abonding method. Then, the single-crystal Si substrate 2 and SiO₂ layer 3are removed, and a thus-obtained combination is cut to a desired size,and, thus, an optical-pickup slider is completed.

[0285] Probes, manufacturing methods thereof, probe arrays andmanufacturing methods thereof in embodiments of the present inventionwill now be described making reference to figures.

[0286] A probe array 2001 in an embodiment of the present invention hasa plurality of single probes, each gathering incident light, as shown inFIGS. 28A and 28B.

[0287] This probe array 2001 is used as an optical head of a near-fieldoptical microscope or an optical head for emitting an optical near-fieldto a recording medium. When the probe array 2001 is used as an opticalhead of a near-field optical microscope for example, the probe array2001 is arranged at a position such that a distance from a sample to bemeasured is equal to or less than a wavelength of light to be incidenton the sample to be measured. In this condition, the probe array 2001generates optical near-fields between the sample to be measured and theprobe array 2001.

[0288] The probe array 2001 has an arrangement shown in FIGS. 28A and28B. As shown in FIG. 28B, the probe array 2001 includes a glasssubstrate 2002, a plurality of Si projecting portions 2003 formed on theglass substrate 2002, bank portions 2004 provided around the Siprojecting portions 2003, and a metal layer 2005 formed on the Siprojecting portions 2003 and bank portions 2004. In this probe array2001, the glass substrate 2002, and the Si projecting portions 2003 andbank portions 2004 are connected together by a method such as anodicbonding or the like. The anodic bonding will be described later in adescription of a method of manufacturing the probe array 2001. In theembodiment, each Si projecting portion 2003 of the probe array 2001corresponds to a single probe.

[0289] The glass substrate 2002 has, as shown in FIG. 28A, alongitudinal dimension t₁ of approximately 3 mm, and a lateral dimensiont₂ of approximately 4 mm, and, as shown in FIG. 28B, a thicknessdimension t₃ of approximately 1 mm, for example.

[0290] The Si projecting portions 2003 is made of ahigh-refractive-index material having a refractive index far higher thanthat of the glass substrate 2002, and, in the embodiment, is made of Si,for example. As shown in FIG. 28A, the Si projecting portions 2003 aresurrounded by the bank portions 2004, and are arranged two-dimensionallyin a longitudinal direction and a lateral direction. Each Si projectingportion 2003 has a shape of a quadrilateral pyramid, for example, asquare pyramid, a base of which faces the glass substrate 2002, and, isformed on the glass substrate 2002. Each Si projecting portion 2003 hasa height dimension t₄ in the range of approximately 5 to 10 μm.

[0291] Further, as shown in FIG. 29, in each Si projecting portion 2003,an angleθ formed by a tip (vertex) is approximately 90 degrees when alength t₇ of one side of the base is approximately 10 μm and a height t₄is approximately 10 μm. Side surfaces of the Si projecting portion 2003are designed so that a light intensity becomes stronger at the tip whenlight is incident on the base of the quadrilateral pyramid.

[0292] Further, as will be described later, in each Si projectingportion 2003, when side surfaces are changed in two steps, a height t₄is approximately 3 μm, a length t₇ of one side of the base isapproximately 2 μm, and an angleθ formed by the tip (vertex) isapproximately 30 degrees. Further, this Si projecting portion 2003 isdesigned so that a diameter of an aperture at the tip is on the order of100 nm, and an optical near-field is generated at the tip, or isdesigned so that a diameter of an aperture at the tip is on the order awavelength of light, and propagation light other than an opticalnear-field is generated at the tip.

[0293] The bank portions 2004 are made of an Si material the same asthat of the Si projecting portions 2003. Each bank portion 2004 has asquare shape having a longitudinal dimension t₅ and a lateral dimensiont₆ (shown in FIG. 28A) of approximately 100 μm each, and a height is inthe range of 5 to 10 μm the same as that of the Si projecting portions2003.

[0294] The bank portions 2004 are arranged two-dimensionally in thelongitudinal direction and lateral direction, and are formed on theglass substrate 2002. As the bank portions 2004 are arrangedtwo-dimensionally, the Si projecting portions 2003 are arrangedtwo-dimensionally on the glass substrate 2002.

[0295] The metal layer 2005 is made of a light-blocking-propertymaterial such as Al or the like, and is formed to have a thickness onsuch an order that light is not transmitted thereby, by film formingtechnology such as deposition, evaporation or the like, for example.This metal film 2005 is formed to have a thickness of on the order ofapproximately 30 nm when an Al material is employed, for example. Themetal layer 2005 is formed on the glass substrate 2002 and the sidesurfaces of the Si projecting portions 2003.

[0296] This probe array 2001 is provided in the above-mentionednear-field optical microscope, and is arranged at a distance equal to orshorter than a wavelength of light from a sample to be measured. Whenlight is incident from the glass-substrate-2002 side, the light isscattered by the metal layer 2005 and is gathered so that a lightintensity becomes stronger at the vertexes of the Si projecting portions2003, and an optical near-field is generated between each Si projectingportion 2003 and the sample to be measured.

[0297] A method of manufacturing the above-described probe array 2001will now be described. A single probe, that is, a single projectingportion 2003 can be manufactured also by the method of manufacturing theabove-described probe array 2001 which will be described below.

[0298] When the probe array 2001 is manufactured, first, as shown inFIG. 30, an SOI (Silicon On Insulator) substrate 2010 is prepared. TheSOI substrate 2010 includes an active layer 2011 made of Si, an SiO₂layer 2012, which is an intermediate layer, formed on the active layer2011, and an Si supporting substrate 2013 formed on the SiO₂ layer 2012.The active layer 2011 has a thickness on the order of approximately 10μm, and has a refractive index on the order of approximately 4 for lighthaving a wavelength on the order of approximately 800 nm. The activelayer 2011 needs to have a uniform surface from which Si projectingportions 2003 and bank portions 2004 will be formed.

[0299] Then, as shown in FIG. 31, a glass substrate 2014 is bonded tothe SOI substrate 2010 by anodic bonding. As the glass substrate 2014,#7740 or #7070 made by Corning Incorporated, the United States ofAmerica, SW-3 made by Asahi Techno Glass Corporation (Iwaki Glass) orthe like is used. The glass substrate 2014 contains Na⁺ ions. With theactive layer 2011 of the SOI substrate 2010 and the glass substrate 2014touched one another and heated to 350° C. to 450° C. in a vacuum or inan inert gas such as N₂, Ar₂ or the like, a voltage on the order of 2.00to 1000 V is applied between the Si supporting substrate 2013 and theglass substrate 2014 with the Si supporting substrate 2013 used as ananode. Positive Na⁺ ions are easy to move in the glass substrate 2014even at a temperature equal to or lower than a melting point of theglass substrate 2014, and, therefore, are attracted by a negativeelectric field, and reach the surface of the glass substrate 2014. Manynegative ions remain in the glass substrate 2014 form a space-chargelayer on a surface on which the glass substrate 2014 adheres the activelayer 2011 (Si), an attraction force thereby is generated between Si andglass, and they are bonded chemically.

[0300] Then, the Si supporting substrate 2013 is removed from the SOIsubstrate 2010 by etching with a KOH solution,tetramethyl-ammonium-hydrooxide (TMAH), ahydrofluoric-acid-and-nitric-acid mixture liquid or the like, ormechanical polishing, or chemical mechanical polishing (CMP). Thereby,the surface of the SiO₂ layer 2012 is exposed.

[0301] Then, as shown in FIG. 32, lithography is performed on thesurface of the SiO₂ layer 2012 exposed as a result of the Si supportingsubstrate 2013 being removed, and, thus, patterns are obtained from theSiO₂ layer 2012. Patterning is made such that the SiO₂ layer 2012 isleft at positions at which tips of Si projecting portions 2003 and bankportions 2004 are arranged as shown in FIGS. 28A and 28B, for example.Thereby, the patterns made of the SiO₂ layer 2012 are formed on theactive layer 2011. As a pattern corresponding to a tip of each Siprojecting portion 2003 for forming the Si projecting portion 2003, apattern having a shape of quadrilateral, for example, square,approximately 10 to 15 μm each side, or a pattern having a circularshape equivalent in size, can be employed.

[0302] Then, as shown in FIG. 33, anisotropic etching using an etchantsuch as a KOH solution, an NaOH solution, a hydrazine hydrate, anethylenediamine-pyrocatechol-and-water mixture liquid (EPW), TMAH or thelike, is performed on the surface on which the patterns of the SiO₂layer 2012 are formed. Thereby, only the portions other than theportions at which the patterns are formed are eroded by the anisotropicetching.

[0303] When a solution obtained as a result of isopropyl alcohol (IPA)being mixed to a KOH solution (34 wt %, 80° C.) is used as an etchingsolution, a probe array 2001 in which an inclination of a side surfaceof the active layer 2011 is one step can be made. In this case, nochange occurs whether a shape of each pattern formed from the SiO₂ layer2012 is circular or quadrilateral.

[0304] In further detail, for example, a pattern of a square, 10 μm eachside, is formed from the SiO₂ layer 2012, an etchant obtained as aresult of KOH (40 g, 85%), water (60 g) and IPA (40 cc) being mixed, isused, and etching is performed at 80. In this case, changes in theactive layer 2011 when etching is performed for 180 seconds, 360seconds, 540 seconds and 750 seconds from the beginning are shown inFIGS. 34A, 34B, 34C and 34D, respectively. Thereby, as shown in FIG. 33,active layers 2011 a which become quadrilateral-pyramid-shaped Siprojecting portions 2003 and an active layer 2011 b which becomes a bankportion 2004, are formed on the glass substrate 2014.

[0305] Then, as shown in FIG. 35, the SiO₂ layer 2012 remaining on theactive layer 2011 a and active layer 2011 b are removed, and a metallayer 2015 is formed on side surfaces of the active layer 2011 a andactive layer 2011 b, and the glass substrate 2014 at portions at whichthe active layer 2011 a and active layer 2011 b do not remain.

[0306] Further, as shown in FIG. 36, a light-blocking film made of ametal layer 2015 is formed on the active layer 2011 b and the surface ofthe glass substrate 2014 on which the active layer is formed, or onlythe active layers 2011 b. In the thus-manufactured probe array 2001, itis possible to block light other than light emitted from tips of the Siprojecting portions 2003, and, thereby, to increase an S/N ratio of aread signal.

[0307] A thickness of the metal layer 2015 is approximately 30 to 50 nmwhen Al is used as a material thereof but is approximately 100 nm whenAu is used as a material thereof. In other words, the metal layer 2015is formed to have a thickness on the order of a skin depth such as toenable light to be incident in the Si projecting portions 2003 and toemit therefrom.

[0308] In the case where gold (Au) is used as a material of the metallayer for example, 1/e² (approximately 13.5%) of incident light istransmitted thereby when the thickness thereof is on the order of 100nm. A thickness on such an order is called a skin depth. Accordingly, inthe case of FIG. 36, an optical near-field is generated from the tip ofthe projecting portion 2003. Because the inclined surface of theprojecting portion 2003 is in a completely reflecting condition, nolight is emitted from the inclined surface. However, in this case, only13.5% of light which reaches the tip inside the silicon is emitted tothe outside. Therefore, the light intensity is low. In order to increasea light intensity, metal only on the tip of the projecting portion isremoved as shown in FIG. 35. In this case, an intensity of an opticalnear-field is high. However, a difficult working process is needed forremoving metal only on the tip of the projecting portion, actually.Therefore, one of the above two cases (a case where metal exists on thetip and a case where metal does not exist on the tip) may be selectedappropriately.

[0309] Thus, by performing the processes described above makingreference to FIGS. 31 through 35, and 36, it is possible to manufacturea probe array 2001, such as that shown in FIGS. 28A and 28B, providedwith a plurality of Si projecting portions 2003 on a glass substrate2002, or a single probe consisting of a single Si projecting portion2003.

[0310] In this probe array 2001, the active layer 2011 made of Si isbonded to the glass substrate 2014, and, thereby, it is possible touniform heights of tips of the respective Si projecting portions 2003,improve planarity of the tips of the Si projecting portions 2003,thereby, to generate optical near-fields and propagation light at thetips to emit with high efficiency and high resolution, and to makecontrol of diameters of apertures easier.

[0311] Further, when not a probe array but a single projecting probe ismade, it is possible to improve planarity of a tip surface of aprojecting probe like a truncated cone or pyramid to one equal to orless than λ/8, that is, a very high one, in particular. Further, adiameter D of an aperture at a tip of a projection can be easilycontrolled by a time of etching by which the projection is made.

[0312] Such a probe array 2001 can be manufactured using an SOIsubstrate 2010. Therefore, error in heights of respective projectingportions 2003 are determined by an accuracy of active layer thickness ofthe SOI substrate 2010. The accuracy of active layer thickness of theSOI substrate 2010 made by crystal growth technology involves only erroron the order of atomic level. Accordingly, it is predicted that error inthe heights of the respective Si projecting portions 2003 is on theorder of atomic level. Therefore, by this method of manufacturing theprobe array 2001, even in comparison to manufacturing technology usingtransfer in the related art, it is possible to control the heights withhigh accuracy, and to manufacture Si projecting portions 2003, positionsof tips thereof being controlled to be uniform.

[0313] Further, in this probe array 2001, because the heights of therespective Si projecting portions 2003 are uniform, it is possible tomake distances between a recording medium and the tips of the respectiveSi projecting portions 2003 uniform when recording/reproducing isperformed on the recording medium, and to locate all the Si projectingportions 2003 to proper positions such that optical near-fields canreach the recording medium. Thus, in this probe array 2001, such asituation that optical near-fields of some of the respective Siprojecting portions 2003 reach the recording medium but those from theother do not reach the recording medium is avoided.

[0314] Further, in this probe array 2001, the SOI substrate 2010 andglass substrate 2014 are bonded together by anodic bonding. Therefore,in comparison to a case where only the SOI substrate 2010 is used,strength thereof is improved.

[0315] Further, if a substrate made of Si is used instead of the glasssubstrate 2014, for example, a thickness of hundreds of microns isneeded for obtaining a satisfactory mechanical strength and Si involvesa propagation loss for visible light, it is not possible for thesubstrate to cause light to be incident in Si projecting portions 2003.In contrast to this, in the probe array 2001, the Si projecting portions2003 are formed on the glass substrate 2014, and the heights of the Siprojecting portions 2003 are in the range of 5 to 10 μm. Si having athickness of 5 to 10 μm has a transmittance of tens of percents for awavelength on the order of 780 to 830 nm. Therefore, it is possible toincrease light amounts incident on the respective Si projecting portions2003, and to increase light intensities of optical near-fields generatedat the tips thereof.

[0316] Accordingly, in this probe array 2001, because the Si projectingportions 2003 are made of Si and the positions of the tips of therespective Si projecting portions 2003 are uniform, efficiencies of therespective Si projecting portions 2003 are uniform, and, both highefficiency and high resolution are achieved, which are hard to becompatible in the related art. Specifically, in this probe array 2001,because the Si projecting portions 2003 employ a material having a highrefractive index such as Si, a wavelength of propagation light in the Siprojecting portions 2003 is effectively shortened, and, thereby lightoozing to the outside from the Si projecting portions 2003 arecontrolled and light use efficiency is improved, and, also, it ispossible to reduce diameters of beam spots.

[0317] Further, because the Si projecting portions 2003 are uniform inthe heights thereof, a recording medium can approach the respective Siprojecting portions 2003 in a range in which optical near-fields existat the tips thereof. Accordingly, it is possible to achieve highefficiency and high resolution of all the Si projecting portions 2003 atthe same time.

[0318] Further, in this probe array 2001, the bank portion 2004 havingthe same height as that of the Si projecting portions 2003 is arrangedto surround the Si projecting portions 2003. Thereby, at a time ofrecording/reproduction to/from a recording medium, even when the Siprojecting portions 2003 and bank portion 2004 come into contact withthe recording medium when facing the recording medium, it is possible toreduce a pressure applied to the Si projecting portions 2003, and toreduce a degree in which the Si projecting portions 2003 is damaged.

[0319] Further, when this probe array 2001 is manufactured, it ispossible for the Si projecting portions 2003 and bank portion 2004 tohave the same height as a result of they being made of the same materialand undergoing etching at the same time. Accordingly, even when the Siprojecting portions 2003 and bank portion 2004 come into contact withthe recording medium when facing the recording medium, it is possible toreduce a pressure applied to the Si projecting portions 2003, and toreduce a degree in which the Si projecting portions 2003 is damaged.

[0320] When Si projecting portions 2003 and bank portion 2004 are formedby etching as described using FIGS. 33 and 34A through 34D, by changingpatterns obtained from etching of an SiO₂ layer 2012 as described usingFIG. 32, it is possible to form the Si projecting portions 2003 having aplurality of inclination angles with respect to a glass substrate 2014.

[0321] Specifically, when a side surface of an active layer 2011 is tohave a plurality of inclination angles, it is preferable that a maskmade from an SiO₂ layer 2012 has a circular shape. Further, when theactive layer 2011, a side surface of which has a plurality ofinclination angles, is made, a KOH solution (34 wt %, 80° C.), NaOH, EPWor TMAH is used as an etchant at a time of etching.

[0322] Further specifically, when a pattern of a square, 10 μm eachside, is formed from an SiO₂ layer 2012, and a KOH solution (34 wt %,80° C.) is used as an etchant, changes in the active layer 2011 whenetching is performed for 60 seconds, 150 seconds, 405 seconds and 483seconds from the beginning are shown in FIGS. 37A, 37B, 37C and 37D,respectively. Thus, an active layer 2011 a is formed on a glasssubstrate 2014. Thereby, it is possible for, as shown in FIG. 37D, anouter wall of the active layer 2011 a have a plurality of inclinedsurfaces 2011 c and 2011 d having different inclination angles (taperingangles).

[0323] In an Si projecting portion 2003 in which an outer wall of anactive layer 2011 a thus has a plurality of inclined surfaces 2011 c and2011 d, a tapering angle is large in a first tapered range having theinclined surface 2011 d while a tapering angle is small in a secondtapered range having the inclined surface 2011 c. Accordingly, in thethus-made Si projecting portion 2003, a loss of light decreases andlight is propagated with a high efficiency in the first tapered range,and a diameter of light from the first tapered range is reduced in thesecond tapered range and a small spot of light is emitted from a taperedportion. Thus, by this Si projecting portion 2003, it is possible toemit light with high efficiency and high resolution.

[0324] In the above-described Si projecting portion 2003, an aperturediameter thereof can be determined by a method of optimization of a corediameter of an optical-fiber probe obtained from tapering an opticalfiber. Here, a material of the core of the optical-fiber probe is aglass material having a refractive index of 1.53.

[0325] Specifically, in optimization of an optical-fiber probe, a methodof analyzing electric-field distribution inside a core is used.According to this electric-field distribution analyzing method, when aclad is assumed to be an ideal metal through which no light leaks, andit is assumed that modes of light exist inside a core are only TE_(1n)mode (n=1 through 6) and TM_(1n) mode (n=1 through 6), a relationshipbetween a core diameter and an electric-field intensity at a center ofthe core shown in FIGS. 38A and 38B is obtained. According to FIGS. 38Aand 38B, in the core of the optical fiber, a plurality of modes exist asshown in FIG. 38A, and an electric-field distribution is formed bysuperposition of the respective modes as shown in FIG. 38B.

[0326]FIG. 38A shows electric-field intensities and equivalentrefractive indexes in the respective modes when a core diameter ischanged. According to FIG. 38A, at cutoff core diameters at which theequivalent refractive indexes converge into 0, the electric-fieldintensities (amplitude ratios) of the respective modes become maximum.

[0327]FIG. 38B shows a sum of the electric-field intensities of therespective modes and spot diameters in respective core diameters whenthe core diameter is changed. It is noted that, when a plurality ofpeaks exist, a spot diameter of peak at the core center is shown.According to FIG. 38B, at the cutoff diameters in the respective modes,not only the electric-field intensities have the maximum values (FIG.38A), but also peaks of small spot diameters are obtained.

[0328] The cutoff diameters of the respective modes will now beconsidered. In the cutoff diameter for propagating light of TE₁₁ mode,an aperture diameter is smaller, that is, a propagation distance islong, and, thereby, a loss increases. In the cutoff diameter of TE₁₃mode, when it is used for information reproduction, because a number ofpeaks obtained increases (5 peaks), information other than necessaryinformation is detected due to influence thereof. Therefore, inconsideration of a propagation distance and a number of peaks, it ispreferable for an optical-fiber probe to have the cutoff diameter ofTE₁₂ mode.

[0329] Based on this analysis result, a case where a core diameter (900to 920 nm, where a wavelength of light λ=830 (nm)) of a cutoff diametersuch that a mode of light propagating inside a core of an optical-fiberprobe is TE₁₂ mode is employed is considered. An experiment result inthis case is shown in FIG. 39.

[0330] According to FIG. 39 (solid line: experiment result), a spotdiameter is approximately 150 nm, and, also, an electric-field intensityat a peak center is 1 (a. u.), and, according to an analysis result inFIGS. 38A and 38B (broken line), a spot diameter is 175 nm and anelectric-field intensity at a peak center is 1 (a. u.). It can be seenthat, when a core diameter is of a cutoff diameter of TE₁₂ mode, themaximum of electric-field intensity and a minute spot are obtained.Further, with regard to a shape of spot, the experiment result andanalysis result satisfactorily coincide with one another.

[0331]FIG. 40 shows such an analysis result and an experiment resultobtained when an optical-fiber probe is used, calculated for a casewhere Si, which is a high-refractive-index medium and is a material ofan Si projecting portion 2003 of the above-mentioned embodiments, isused as a material of a core thereof. According to FIG. 40, when Si isused as a material of core, by causing a diameter of the core made of Sito coincide with a cutoff diameter (0.4 μm) of TE₁₂ mode, it is possibleto form a minute spot diameter (approximately 75 nm) and the maximum ofelectric-field intensity.

[0332] Accordingly, as a result of an aperture diameter of an Siprojecting portion 2003 being determined to be a cutoff diameter of TE₁₂mode, it is possible to manufacture a probe array or a single probe bywhich a minute spot diameter is formed and the maximum of electric-fieldintensity is obtained, similarly to a case of an optical-fiber probe.Further, it is possible to manufacture a probe array or a single probein which a loss is small and a number of peaks is small, and, therefore,which is suitable for information recording/reproducing.

[0333] Further, when a metal layer 2015 is formed, it is possible that,as shown in FIG. 28B, a light-blocking film may be formed only oninclined surfaces of an active layer 11 b and aprojecting-portion-formed surface of a substrate, or only on inclinedsurfaces of projecting portions.

[0334] When a probe array 2001 in which a metal layer 20015 is formedonly on inclined surfaces of Si projecting portions 2003, a shape of amask made from an SiO₂ layer 2012 is such that, as shown in FIG. 41A, acentral portion 2012 a of the SiO₂ layer 2012 on a position of a tip ofan Si projecting portion 2003 which will be formed has a predeterminedthickness, and a surrounding portion 2012 b of the SiO₂ layer 2012 onpositions other than the position of the tip of the Si projectingportion 2003 has a thickness equal to or larger than the predeterminedthickness. For example, the central portion 2012 a has a thickness atleast on the order of 200 nm, and the surrounding portion 2012 b has athickness on the order of ⅕ to {fraction (1/10)} of the thickness of thecentral portion 2012 a.

[0335] Etching is performed on the SiO₂ layer 2012 having this shape andan active layer 2011 using an etchant, as shown in FIGS. 41B and 41C,and, thus, the central portion 2012 a is caused to remain only on a tipof ap active layer 2011 a, finally, as shown in FIG. 41D. Then, a metallayer 2015 is formed using the remaining central portion 2012 a as acap. Then, as shown in FIG. 41E, the central portion 2012 a is removedby wet etching. Thereby, it is possible to make a combination in whichthe metal layer 2015 is absent on the tip of the active layer 2011 a,and to form the metal layer 2015 only on an inclined surface of theactive layer 2011 a.

[0336] In the thus-manufactured probe array 2001, light other than lightgenerated from the tip of the Si projecting portion 2002 can be blocked.Therefore, in comparison to the case shown in FIG. 36, it is possible tofurther increase an intensity of generated light.

[0337] A light efficiency of a probe array 2001 manufactured asdescribed above will now be described. FIG. 42A shows a measurementarrangement used when the light efficiency of the probe array 2001 ismeasured. In this measurement arrangement, laser light having awavelength of 830 nm is emitted by a laser diode 2021, and an opticalnear-field is generated at a tapered portion 2025 (aperture diameter=100nm) of an optical-fiber probe, which includes a core 2022, a clad 2023and a metal covering layer 2024 and a tip of which is tapered. In theprobe array 2001, the optical near-field generated at the taperedportion 2025 of the optical-fiber probe is detected, and, light havingpassed through an Si projecting portion 2003 and a glass substrate 2002is detected by a photodetector 2026. Here, the aperture diameter of thetapered portion 2025 of the optical-fiber probe is 100 nm. In thismeasurement arrangement, it is possible to measure a light intensity ofan optical near-field generated at a tip of the Si projecting portion2003 when laser light is incident from the optical-fiber probe. Thereby,it is possible to obtain a throughput of the probe array in a near fieldrange. Further, in order to evaluate a throughput and a resolution ofthe probe array 2001, measurement was performed (FIG. 42B) also on aninternal light-gathering probe (aperture diameter D=920 nm) havingcharacteristics of high throughput (10%) and high resolution (150 nm).

[0338]FIG. 43 shows a relationship between a light intensity (a. u.)detected by the photodetector 2026 and a position (μm) at which light isdetected measured by this measurement arrangement. In FIG. 43, acharacteristic A (solid line) is a measurement result on the probe array1 made by the above-described processes while a characteristic B (brokenline) is a measurement result on the internal light-gathering probe.When the characteristic A and characteristic B are compared with oneanother, it is seen that the probe array 2001 has an efficiency of 10%,has a throughput (15%) larger than that of the internal light-gatheringprobe, and has a resolution of 75 nm.

[0339] Accordingly, by a probe array 2001 manufactured by theabove-described manufacturing method, light is gathered at highefficiency and an optical near-field having a high light intensity canbe generated at a tip of an Si projecting portion 2003, and, also,sample measurement can be performed with a high resolution at the sametime.

[0340] Further, by this probe array 2001, it is possible to performrecording and/or reproducing a signal to/from a recording medium at ahigh recording density and with a high S/N, by causing light to beincident on the recording medium, for example.

[0341] Another example of a method of manufacturing a probe array 2001or a single probe will now be described. Technique(s) described above inthe description of the manufacturing method of a probe array 2001 or asingle probe can also be used in a case of manufacturing a probe arrayor single probe which will now be described.

[0342] In the above-described manufacturing method of a probe array2001, a material of projecting portions made on a glass substrate 2014is not limited to Si. Any other material having a refractive indexhigher than that of the glass substrate 2014 can be used instead. Asmaterials having a light transmitting range on the short-wavelength sideof that of Si and having high refractive indexes, there are GaP, TiO₂(commonly called rutile) and so forth. GaP has a light transmittingrange in 530 nm to 16 μm and has a refractive index of 3.35 in the lighttransmitting range. TiO₂ has a light transmitting range in 450 nm to 6μm and has a refractive index of 2.61 to 2.90 in the light transmittingrange.

[0343]FIGS. 44A through 44G show a method of manufacturing a probe arrayor a single probe using GaP.

[0344] First, as shown in FIG. 44A, to a single-crystal Si wafer 2041,to which an oxide film 2042 is attached as an intermediate layer, asingle-crystal GaP wafer 2043 is bonded by direct bonding ornormal-temperature bonding. A thickness of the single-crystal GaP wafer2043 is caused to be 5 to 10 μm by etching or CMP. Thus, a substrate isprepared.

[0345] Then, as shown in FIG. 44B, a glass substrate 2044 and thesingle-crystal GaP wafer 2043 are bonded to one another by directbonding or normal-temperature bonding.

[0346] Then, as shown in FIG. 44C, the single-crystal Si wafer 2041 isremoved.

[0347] Then, as shown in FIG. 44D, SiO₂ patterns 2042A made from theSiO₂ layer are formed on the single-crystal GaP wafer 2043. Therespective SiO₂ patterns 2042A are appropriate patterns and haveappropriate dimensions for forming projecting portions made of GaP inlater processes.

[0348] Then, as shown in FIG. 44E, etching is performed on thesingle-crystal GaP wafer 2043 by RIE or a liquid etchant using thepatterns 2042A as etching masks, and, thus, GaP projecting portions2043A are formed. It is also possible to form the GaP projectingportions 2043A using only photoresist patterns made by photolithographyas etching masks without using the SiO₂ layer as etching masks.

[0349] Then, as shown in FIG. 44F, the SiO₂ patterns 2042A remaining onthe GaP projecting portions 2043A are removed by a dilute hydrofluoricacid or the like.

[0350] Then, as shown in FIG. 44G, a metal layer 2045 is formed on sidesurfaces of the GaP projecting portions 2043A and a surface of the glasssubstrate 2044 at positions at which the GaP projecting portions 2043Aare absent.

[0351] Thereby, it is possible to make a projection-type probe arrayhaving a plurality of projecting portions made of GaP. It is possible tomake a probe array provided with projecting portions by approximatelysame processes also in a case where another material such as TiO₂ or thelike other than GaP is employed.

[0352] Because a probe array provided with a plurality of projectingportions made of GaP or TiO₂ has a high light transmitting range on theshort-wavelength side of that of a probe array made of Si, lightabsorption in a short wavelength band is small, and it is possible toobtain a further higher light utilization efficiency. Further, becauseit is possible to use light having a short wavelength in comparison to acase where Si is used, it is possible to form further smaller beamspots, and, to increase a recording density when information is recordedon a recording medium for example.

[0353] An example of a method of manufacturing a probe array using an Siwafer other than an SOI substrate will now be described making referenceto FIGS. 45A through 45H. Technique(s) described above in thedescriptions of the manufacturing methods of probe arrays 2001 or singleprobes can also be used in a case of manufacturing a probe array or asingle probe which will now be described.

[0354] First, as shown in FIG. 45A, an n-type Si layer 2052 having athickness of 5 to 10 μm is formed on a p-type Si layer 2051 having athickness of hundreds of microns, and, thus, a substrate is prepared.Here, the n-type Si layer 2052 may be formed by epitaxial growth on thep-type Si layer 2051, or may be formed as a result of n-type impuritiesbeing diffused from a surface of the p-type Si layer 51 by solid phasediffusion or ion implantation. Alternatively, the substrate may be madeas a result of the p-type Si layer 2051 and n-type Si layer 2051 beingstuck together.

[0355] Then, as shown in FIG. 45B, a glass substrate 2053 is prepared,and the glass substrate 2053 and the substrate consisting of the p-typeSi layer 2051 and n-type Si layer 2052 are bonded together by anodicbonding in a manner such that the glass substrate 2053 is in contactwith the surface of the n-type Si layer 2052. Here, electrodes 2054 areformed or electrode plates 2054 are placed on a surface of the glasssubstrate 2053, which surface does not have the n-type Si layer 2052 incontact therewith and a surface of the p-type Si layer 2051, whichsurface does not have the n-type Si layer 2052 in contact therewith,then, a power source 2055 which applies a voltage Vb between therespective electrodes 2054 is provided, and, thereby, anodic boning isperformed. It is also possible to bond the glass substrate 2053 andn-type Si layer 2052 together by direct bonding or normal-temperaturebonding other than anodic bonding.

[0356] Then, as shown in FIG. 45C, after the p-type Si layer 2051 isremoved almost completely by mechanical polishing, or chemicalmechanical polishing (CMP), etching by an alkaline etchant such ashydrazine (N₂H₄H₂O), a KOH solution, an NaOH solution, a CaOH solution,EDP (EthyleneDiamine Pyrocatechol (water)), TMAH (TetraMethylAmmoniumHydroxide), (CH₃)₄NOH) or the like. However, at this time, theetching is performed with a power source 2057 provided which applies avoltage Vece between the n-type Si layer 2052 and a reference electrode2056 placed in the etchant.

[0357]FIG. 46 roughly shows an etching arrangement for performing suchan etching method (electrochemical etching). In this etchingarrangement, a Pt electrode 2061 corresponding to the above-mentionedreference electrode 2056, a power source 2062 corresponding to theabove-mentioned power source 2057, an ammeter 2063, and an etchingobject 2064 corresponding to the above-mentioned substrate consisting ofn-type Si layer 2052 and glass substrate 2053 are connected in series-,and the Pt electrode 2061 and etching object 2064 are arranged in anetchant 2065. In this etching arrangement, the etchant 2065 is stirredby a stirrer 2066 and is maintained at 90° C. by a heater 2067.

[0358] Using such an etching arrangement, an alkaline etchant, forexample, erodes not only the p-type Si layer 2051 but also SiO₂ (maincomponent of the glass substrate 2053). However, because the glasssubstrate 2053 is thick, it is not eroded completely. Further, becausethe n-type Si layer 2051 and glass substrate 2053 are bonded togethervery firmly, no etchant enters therebetween and the n-type Si layer 2052is not eroded. Accordingly, only the p-type Si layer 2051 is removed byetching. In a case where hydrofluoric acid and nitric acid is used as anetchant, etching hardly advances further when the n-type Si layer 2052is exposed. Therefore, it is possible for etching to stop when thep-type Si layer 2051 is completely removed by the etching.

[0359] Then, as shown in FIG. 45D, a pattern-forming layer 2058, made ofSiO₂, Si₃N₄ or the like, which is not easily eroded by an alkalineetchant, is formed on the surface of the n-type Si layer 2052 by plasmaCVD, thermal CVD or the like.

[0360] Then, as shown in FIG. 45E, predetermined shapes are made fromthe pattern-forming layer 2058, and, thus, patterns 2058A made from thepattern-forming layer 2058 are formed on the n-type Si layer 2052. Thesepatterns 2058A are appropriate patterns and have appropriate dimensionsfor forming respective Si projecting portions.

[0361] Then, as shown in FIG. 45F, an alkaline etchant such ashydrazine, a KOH solution, an NaOH solution, a CaOH solution, EDP, TMAHor the like is used, and, thereby, Si projecting portions 2052A areformed. It is also possible to make the Si projecting portions 2052A byRIE using only photoresist patterns made by photolithography as etchingmasks without using the patterns 2058A as etching masks.

[0362] Then, as shown in FIG. 45G, the patterns 2058A remaining on theSi projecting portions 2052A are removed by a dilute hydrofluoric acidor the like.

[0363] Then, as shown in FIG. 45H, a metal layer 2059 is formed on sidesurfaces of the Si projecting portions 2052A and a surface of the glasssubstrate 2053 at positions at which the Si projecting portions 2052Aare not formed.

[0364] Thereby, it is possible to make a projection-type probe array ora single probe having projecting portion(s) made of Si without using anSOI substrate.

[0365] Another example of a method of manufacturing a probe array or asingle probe will now be described making reference to FIGS. 47A through47H.

[0366] First, as shown in FIG. 47A, a substrate is prepared in which ahigh-concentration Si layer 2071 made of a high-concentration p-type orn-type Si material and having a thickness of hundreds of microns has alow-concentration Si layer 2072 made of a low-concentration p-type orn-type Si material and having a thickness of 5 to 10 μm formed thereon.Here, the low-concentration Si layer 2072 may be formed by epitaxialgrowth thereof on the high-concentration Si layer 2071, or may be formedas a result of impurities of a type opposite to a type of thehigh-concentration Si layer 2071 being diffused from the surface of thehigh-concentration Si layer 2071 by solid phase diffusion, ionimplantation or the like, and an impurity concentration being loweredeffectively by a compensation effect. Alternatively, the substrate maybe made as a result of the high-concentration Si layer 2071 andlow-concentration Si layer 2072 being stuck together.

[0367] Here, it is important that respective impurity concentrations ofthe high-concentration Si layer 2071 and low-concentration Si layer 2072are high and low. Any combinations of p-type Si and n-type Si arepossible, however, it is preferable that the low-concentration Si layer2072 is of an n-type Si material when the low-concentration Si layer2072 and high-concentration Si layer 2071 have different conductiontypes. A reason therefor is that, when a voltage is applied in anodicbonding, bonding can be easily made when a p-n junction is forwardlybiased. Further, the impurity concentration of the high-concentration Silayer should be higher than approximately 10¹⁷/cm³, and the impurityconcentration of the low-concentration Si layer should be equal to orlower than approximately 10¹⁷/cm³.

[0368] Then, as shown in FIG. 47B, a glass substrate 2073 is prepared,and anodic bonding is performed such that the glass substrate 2073 is incontact with the surface of the low-concentration Si layer 2072. Here,electrodes 2074 are formed or electrode plates 2074 are placed on asurface of the glass substrate 2073, with which surface thelow-concentration Si layer 2072 is not in contact, and a surface of thehigh-concentration Si layer 2071, with which surface thelow-concentration Si layer 2072 is not in contact, then, a power source2075 which applies a voltage Vb between the respective electrodes 2074is provided, and, thereby, anodic boning is performed. It is alsopossible to bond the glass substrate 2073 and low-concentration Si layer2072 together by direct bonding or normal-temperature bonding other thananodic bonding.

[0369] Then, as shown in FIG. 47C, after the high-concentration Si layer2071 is removed almost completely by mechanical polishing, or chemicalmechanical polishing (CMP), a thus-obtained combination is immersed inan etchant of hydrofluoric acid and nitric acid. A composition of theetchant is such that HF:HNO₃:CH₃COOH=1:3:8 (volume ratio). An etchingrate of this etchant when an impurity concentration is lower than10¹⁷/cm³ is 1/150 of that when it is higher than 10¹⁷/cm³. This etchanterodes not only Si but also SiO₂ (main component of glass). However,because the glass substrate 2073 is very thick, it is not erodedcompletely. Further, because the low-concentration Si layer 2072 andglass substrate 2073 are bonded together very firmly, no etchant enterstherebetween and the low-concentration Si layer 2072 is not eroded.Accordingly, only the high-concentration Si layer 2071 is removed byetching. In etching using HF:HNO₃:CH₃COOH=1:3:8 (volume ratio) as anetchant, etching hardly advances further when the high-concentration Silayer 2071 is first removed and thereby the low-concentration Si layer2072 is exposed. Therefore, it is possible for etching to stop when thehigh-concentration Si layer 2071 is completely removed by the etching.

[0370] Then, as shown in FIG. 47D, a pattern-forming layer 2078, made ofSiO₂, Si₃N₄ or the like, which is not easily eroded by an alkalineetchant, is formed on the surface of the low-concentration Si layer 2072by plasma CVD, thermal CVD or the like.

[0371] Then, as shown in FIG. 47E, predetermined shapes are made fromthe pattern-forming layer 2078, and, thus, patterns 2078A made from thepattern-forming layer 2078 are formed on the low-concentration Si layer2072. These patterns 2078A are appropriate patterns and have appropriatedimensions for forming a single projecting portion or respective Siprojecting portions.

[0372] Then, as shown in FIG. 47F, an alkaline etchant such ashydrazine, a KOH solution, an NaOH solution, a CaOH solution, EDP, TMAHor the like is used, and, thereby, Si projecting portions 2072A areformed. It is also possible to make the Si projecting portions 2072A byRIE using only photoresist patterns made by photolithography as etchingmasks without using the patterns 2078A as etching masks.

[0373] Then, as shown in FIG. 47G, the patterns 2078A remaining on theSi projecting portions 2072A are removed by a dilute hydrofluoric acid,dry etching or the like.

[0374] Then, as shown in FIG. 47H, a metal layer 2079 is formed on sidesurfaces of the Si projecting portions 2072A and the surface of theglass substrate 2073 at positions at which the Si projecting portion2072A are not formed.

[0375] Another example of a method of manufacturing a probe array or asingle probe will now be described making reference to FIGS. 48A through48H.

[0376] First, as shown in FIG. 48A, a substrate is prepared in which ann-type Si layer 2081 made of an n-type Si material and having athickness of hundreds of microns has a high-concentration p-type Silayer 2082 made of a high-concentration p-type Si material having animpurity concentration higher than that of the n-type Si layer 2081 andhaving a thickness of 5 to 10 μm formed thereon. Here, an impurityconcentration of the high-concentration p-type Si layer 2082 is higherthan 10²⁰/cm³ when KOH is used in removing the n-type Si layer 2081 byetching, but is higher than 10¹⁹/cm³ when EDP is used in removing then-type Si layer 2081 by etching. The high-concentration p-type Si layer2082 may be formed by epitaxial growth thereof on the n-type Si layer2081, or may be formed as a result of p-type impurities being diffusedfrom the surface of the n-type Si layer 2081 by solid phase diffusion,ion implantation or the like. Alternatively, the substrate may be madeas a result of the n-type Si layer 2081 and high-concentration p-type Silayer 2082 being stuck together.

[0377] Then, as shown in FIG. 48B, a glass substrate 2083 is prepared,and anodic bonding is performed such that the glass substrate 2083 is incontact with the surface of the high-concentration p-type Si layer 2082.Here, similarly to FIG. 47B, an electrode plate is placed on a surfaceof the glass substrate 2083, with which surface the high-concentrationp-type Si layer 2082 is not in contact. Alternatively, for more positivebonding, as well as an electrode 2084 a is formed on the surface of theglass substrate 2083, with which surface the high-concentration p-typeSi layer 2082 is not in contact, a part of the n-type Si layer 2081 isremoved and an electrode 2084 b is formed as shown in FIG. 48B so that avoltage is applied to the high-concentration p-type Si layer 2082directly, and, then, a power source 2085 which applies a voltage Vbbetween the respective electrodes 2084 a and 2084 b is provided, and,thereby, anodic boning is performed. It is also possible to bond theglass substrate 2083 and high-concentration p-type Si layer 2082together by direct bonding or normal-temperature bonding other thananodic bonding.

[0378] Then, after the electrodes 2084 a and 2084 b are removed, and,then, the n-type Si layer 2081 is removed almost completely bymechanical polishing, or chemical mechanical polishing (CMP), as shownin FIG. 48C, etching by an alkaline etchant is performed on athus-obtained combination. As the etchant, hydrazine, a KOH solution, anNaOH solution, a CaOH solution, EDP, TMAH or the like is used. Thisetchant erodes not only Si but also SiO₂ (main component of glass).However, because the glass substrate 2083 is very thick, it is noteroded completely. Further, because the high-concentration p-type Silayer 2082 and glass substrate 2083 are bonded together very firmly, noetchant enters therebetween and the high-concentration Si layer 2082 isnot eroded. Accordingly, only the n-type Si layer 2081 is removed byetching. Etching hardly advances further when the high-concentrationp-type Si layer 2082 is exposed. Therefore, it is possible for etchingto stop when the n-type Si layer 2081 is completely removed by theetching.

[0379] Then, as shown in FIG. 48D, a pattern-forming layer 2088, made ofSiO₂, Si₃N₄ or the like, which is not easily eroded by an alkalineetchant, is formed on the surface of the high-concentration p-type-Silayer 2082 by plasma CVD, thermal CVD or the like.

[0380] Then, as shown in FIG. 48E, predetermined shapes are made fromthe pattern-forming layer 2088, and, thus, patterns 2088A made from thepattern-forming layer 2088 are formed on the high-concentration p-typeSi layer 2082. These patterns 2088A are appropriate patterns and haveappropriate dimensions for forming a single projecting portion orrespective Si projecting portions.

[0381] Then, as shown in FIG. 48F, Si projecting portions 2082A areformed by RIE. It is also possible to make the Si projecting portions2082A by RIE using only photoresist patterns made by photolithography asetching masks without using the patterns 2088A as etching masks.

[0382] Then, as shown in FIG. 48G, the patterns 2088A remaining on theSi projecting portions 2082A are removed by a dilute hydrofluoric acid,dry etching or the like.

[0383] Then, as shown in FIG. 48H, a metal layer 2089 is formed on sidesurfaces of the Si projecting portions 2082A and the surface of theglass substrate 2083 at positions at which the Si projecting portion2082A are not formed.

[0384] Thereby, it is possible to make a projection-type probe array orsingle probe having projecting portion(s) made of Si without using anSOI substrate.

[0385] Another probe array according to the present invention will nowbe described. In the probe array which will now be described, it ispossible to use any one of the arrangements described above in thedescriptions of the above-described probe arrays. Further, the probearray which will now be described may be a single probe.

[0386]FIG. 49A shows a plan view of a probe array 2100 which is arrangedin such a manner that a side on which projecting portions 2101 areformed faces a rotational recording medium (optical disc D) on whichinformation is recorded, as shown in FIG. 49B, and emits light to therotating optical disc D and performs recording/reproducing informationon/from it.

[0387] The probe array 2100 has one end 2100 a from which a medium(rotating optical disc D) comes and the other end 2100 b to which themedium goes. An air flow is generated as the optical disc D rotates,and, the probe array 2100 receives the thus-generated air flow, comesinto contact with the optical disc D, emits light to the optical disc D,and performs information recording/reproducing in a contact manner. Thisprobe array 2100 can also be used as a floating-type probe array whichfloats from an optical disc D by a fixed floating amount.

[0388] This probe array 2100 has a bank portion 2102 which is arrangedto surround the projecting portions 2101 and has an opening portion 2102a on a downstream side of an air flow generated due to rotation of theoptical disc D.

[0389] In this probe array 2100, an air flow coming from the one end2100 a is directed to the other end 2100 b and is caused to go out viathe opening portion 2102 a of the bank portion 2102 to the other end2100 b.

[0390] In this probe array 2100, the bank portion 2102 includes a bank2102 c perpendicular to an air-flow-generation direction(medium-rotation direction) on the one-end-2100 a side of the projectingportions 2101. Thereby, it is possible to prevent dusts and so forthflowing from the one end 2100 a to the other end 2100 b from flowinginto the projecting portions 2101.

[0391] Further, in this probe array 2100, even when dusts/dirt existinginside a device flow into the bank portion 2102 due to an air flowmentioned above, these flow out from the opening portion 2102 a.Thereby, no dusts/dirt accumulate in the vicinity of the projectingportions 2101.

[0392] Further, in this probe array 2100, because the bank portion 2102has the opening portion 2102 a and thus no bank exists on theother-end-2100 b side, it is possible to form the projecting portions2101 on the other-end-2100 b side. Thereby, it is possible to cause tipsof the projecting portions 2101 to approach the optical disc D and toshorten distances between the projecting portions 2101 and the opticaldisc D. Thereby, it is possible to reduce diameters of beam spots formedon the optical disc D by light emitted from the projecting portions2101, and to increase a recording density on the optical disc D.

[0393] Further, in the probe array 2100, the bank portion 2102 has endportions 2102 b on the other-end-2100 b side, which end portions aretapered portions 2102 b inclined from the one end 2100 a to the otherend 2100 b. Vertexes of the tapered portions 2102 b are aligned withtips of projecting portions 2101 arranged on the other-end-2100 b sidein a straight line in short-axis directions of the glass substrate.Thereby, at a time of recording/reproduction, even when the vertexes ofthe tapered portions 2102 b come into contact with the optical disc D, apressure applied to the vertexes of the bank portion 2102 by the opticaldisc D is spread. As a result, it is possible to prevent the bankportion 2102 from being destroyed.

[0394] Further, in the probe array 2100, the bank 2102 c of the bankportion 2102 has a tapered portion 2102 d inclined from the one-end-2100a side to the other-end-2100 b side. Thereby, even when the optical discD comes to and comes into contact with the bank 2102 c, a shock againstthe optical disc D is absorbed by the tapered portion and it is possibleto prevent the optical disc D from being destroyed.

[0395] Further, in the probe array 2100, the bank portion 2102 includesbanks 2102 e and 2102 f approximately parallel to theair-flow-generation direction (medium-rotation direction) andperpendicular to a radial direction of the optical disc D. The banks2102 e and 2102 f has tapered portions 2102 g and 2102 h inclined in theradial direction of the optical disc D. Thereby, at a time ofinformation recording/reproducing by the probe array 2100 on the opticaldisc D, even when the bank 2102 e or 2102 f comes into contact with theoptical disc D as the probe array 2100 moves in the radial direction ofthe optical disc D, a shock against the optical disc D is absorbed bythe tapered portion 2102 g or 2102 h and it is possible to prevent theoptical disc D from being destroyed.

[0396] Further, in the probe array 2100, the glass substrate has aprotruding portion 2103 which protrudes on the other-end-2100 b side.The protruding portion 2103 protrudes from the projecting portions 2101to the other end 2100 b by a length of t₈, as shown in FIG. 49A. Thislength t₈ is set so that, at a time of recording/reproducing, lightemitted from a light source can be incident on the projecting portions2101 nearest to the other end 2100 b. Specifically, the length t₈ of theprotruding portion 2103 is determined based on a thickness of the glasssubstrate, a refractive index of the glass substrate, and a numericalaperture of an optical component (objective lens) 2104 for directinglight to the projecting portions 2101. Thereby, in the probe array 2100,the thus-determined length t₈ is an optimum length, the projectingportions 2101 are arranged on the other-end-2100 b side, it is possibleto shorten a distance from the optical disc D, and, thereby, a smallbeam spot is formed on the optical disc D as a result of light beinggathered.

[0397] Further, the probe array 2100 may be modified as shown in FIG.50. In the probe array 2100 shown in FIG. 50, each of banks 2102 f and2102 e is of multiple steps. In this probe array 2100, a tapered portion2102 b and a tapered portion 2102 i are formed in each of the banks 2102f and 2102 e from one end 2100 a to the other end 2100 b, and, inshort-axis directions, vertexes of the tapered portions 2102 i arealigned with tips of projecting portions 2101 located on theother-end-2100 b side in a straight line.

[0398] Thereby, when the probe array 2100 shown in FIG. 50 comes intocontact with an optical disc D, the vertexes of the tapered portions2102 b and tapered portions 2102 i come into contact with the opticaldisc D as shown in FIG. 50, and it is possible to distribute a forceapplied to the optical disc D to more points than those in a case wherethe vertexes of only the tapered portions 2102 b come into contact withthe optical disc D, and to reduce damage of the projecting portions 2101and to reduce damage of the optical disc D.

[0399] Further, when this probe array 2100 shown in FIG. 50 is used forinformation recording/reproducing performed as being in contact with anoptical disc D, because each of the banks 2102 f and 2102 e is ofmultiple steps, the vertexes of the tapered portions 2102 b and 2102 icome into contact with the optical disc D. Thereby, it is possible toprevent the probe array 2110 from inclining at a time ofrecording/reproducing.

[0400] Further, when this probe array 2100 shown in FIG. 50 is used,because each of the banks 2102 f and 2102 e is of multiple steps, it ispossible to reduce a coefficient of static friction by reducing acontact area with an optical disc D, and to reduce an abrasion amount ofthe banks 2102 f and 2102 e.

[0401] Further, because the vertexes of the tapered portions 2102 b and2102 i come into contact with a recording medium and two points arrangedin an air-flow-generation direction come into the recording medium foreach of the banks 2102 f and 2102 e, the probe array 2110 can beprevented from pitching.

[0402] Another probe array according to the present invention will-nowbe described. In the probe array which will now be described, it ispossible to use any one of the arrangements described above in thedescriptions of the above-described probe arrays. Further, the probearray which will now be described may be a single probe.

[0403]FIG. 51A shows a plan view of a probe array 2110 which is arrangedin such a manner that a side on which projecting portions 2111 areformed faces a rotational recording medium (optical disc D) on whichinformation is recorded as shown in FIG. 51B, and emits light to therotating optical disc D and performs recording/reproducing informationon/from it.

[0404] This probe array 2110 has a bank portion 2112 made of ahigh-refractive-index material (for example, Si) the same as that of theprojecting portions 2111 and arranged in a position such as to surroundthe projecting portions 2111, and pad portions 2113 made of the samematerial as that of the projecting portions 2111, provided on thesurface thereof facing the optical disc D.

[0405] In this probe array 2110, as described above, when the projectingportions 2111, bank portion 2112 and pad portions 2113 are made, anetching layer (for example, SiO₂) is formed on a singlehigh-refractive-index layer, respective patterns corresponding to theprojecting portions 2111, bank portion 2112 and pad portions 2113 areformed from the etching layer, and, etching is performed on athus-obtained combination so that the projecting portions 2111, bankportion 2112 and pad portions 2113 are formed simultaneously from thehigh-refractive-index layer.

[0406] When this probe array 2110 is used, the projecting portions 2111,bank portion 2112 and pad portions 2113 are caused to come into contactwith an optical disc D as shown in FIG. 51B. Then, light from theprojecting portions 2111 is caused to be incident on the optical disc D,and recording/reproducing of information is performed on the opticaldisc D.

[0407] Because the projecting portions 2111, bank portion 2112 and padportions 2113 are formed from the same material simultaneously byetching as mentioned above, it is possible to make the projectingportions 2111, bank portion 2112 and pad portions 2113 have the sameheight in the probe array 2110. Thereby, it is possible to improvestability in sliding of the probe array 2110 on an optical disc D, andto prevent the projecting portions 2111 from being destroyed.

[0408]FIG. 52 shows a relationship between a mark length (μm) and a CNratio (dB) in a case where such a probe array 2110, in which hundredprojecting portions 2111 are arranged, is used for recording marks on aphase-change optical disc D and reproducing from the thus-recorded marksin a condition where light having a wavelength of 830 nm is incident oneach projecting portion 2111 and an optical near-field is generated at atip thereof, and the phase-change optical disc D is rotated at a linearvelocity of 0.43 m/s. According to FIG. 52, the minimum mark length whenthe probe array 2110 is used to recording marks is 110 nm, and a CNratio when reproduction from the mark is performed is approximately 10dB. Accordingly, it is possible to record a mark having a size equal toor smaller than a diffraction limit which could not be achieved by apropagation light, and to reproduce therefrom.

[0409] In contrast to this, the minimum mark length when an objectivelens having a numerical aperture of 0.4 is used to emit propagationlight to the optical disc D so as to record marks thereon is 515 nm, anda CN ratio when reproduction from the mark is performed is approximately10 dB.

[0410] According to this result, when the prove array 2110 is used, itis possible to perform recording/reproducing in a condition in which arecording/reproducing rate is a very high rate of 1 Gbps by performingrecording/reproducing in parallel using the hundred projecting portions2111, and, to reduce sizes of marks so as to achieverecording/reproducing in a very high density.

[0411] Another probe array according to the present invention will nowbe described. In the probe array which will now be described, it ispossible to use any one of the arrangements described above in thedescriptions of the above-described probe arrays. Further, the probearray which will now be described may be a single probe.

[0412]FIG. 53A shows a plan view of a probe array 2120 which is arrangedin such a manner that a side on which projecting portions 2121 areformed faces a rotational recording medium (optical disc D) on whichinformation is recorded as shown in FIG. 53B, and emits light to therotating optical disc D and performs recording/reproducing informationon/from it.

[0413] This probe array 2120 has a bank portion 2122 made of ahigh-refractive-index material (for example, Si) the same as that of theprojecting portions 2121 and arranged in a position such as to surroundthe projecting portions 2121, and pad portions 2123 made of the samematerial as that of the projecting portions 2121, provided on thesurface thereof facing the optical disc D. The probe array 2120 performsrecording/reproducing of information in a condition in which the bankportion 2122 and pad portions 2123 are in contact with the optical discD.

[0414] The pad portions 2123 are formed so as to be located on a centerline at a central position between one end 2120 a and the other end 2120b, or so that a central position of the pad portions 2123 is located ata position within the range between ±0.1 from the central positionbetween the one end 2120 a and the other end 2120 b assuming that alength between the one end 2120 a and the other end 2120 b is 1. Asshown in FIG. 53B, a pressing member 2124 presses the probe array 2120so as to cause it to come into contact with the optical disc D, and thepad portions 2123 are arranged right underneath a position at which thepressing member 2124 presses the probe array 2120 in a pressingdirection (thickness direction of the probe array 2120). Thereby, thepad portions 2123 transmits a pressing force of the pressing member 2124to the optical disc D, and, thereby, the probe array 2120 is pressedonto the optical disc D. Thereby, it is possible to further improvestability of sliding of the probe array 2120 on the optical disc D.Further, a manner of arranging the pad portions 2123 is not limited toone in which the central position thereof is located at a predeterminedposition between the one end 2120 a and the other end 2120 b, and, it isalso possible to arrange the pad portions 2123 in a manner in which thecenter of gravity thereof is located at a predetermined position betweenthe one end 2120 a and the other end 2120 b.

[0415] When the probe array 2120 is used, in comparison to a case wherethe above-mentioned probe array 2110 is used, it is possible to controla jumping amount when recording/reproducing is performed on an opticaldisc D. Comparison in jumping amount between the probe array 2110 inwhich the pad portions are provided on the medium-coming side and theprobe array 2120 in which the pad portions are located at the centralposition will now be made.

[0416] For the comparison, a jumping-amount measuring arrangement 2130shown in FIG. 54 is used. This jumping-amount measuring arrangement 2130includes an FFT (Fast Fourier Transform) measuring device 2131, aDoppler vibration meter 2132, and a motor 2133 which rotates an opticaldisc D, and measures a vibration of a probe array which is placed on theoptical disc D.

[0417] In this jumping-amount measuring arrangement 2130, in a conditionin which the optical disc D is rotated in a CLV way (linearvelocity=0.43 m/s) and the probe array is placed on the optical disc D,laser light from a light source 2141 is incident on the probe array viaa beam splitter 2142 and an optical-fiber cable 2143, and the reflectedlight is detected by a photo-detector 2146 via the optical-fiber cable2143, beam splitter 2142, an AOM 2144 and a beam splitter 2145. Further,in this jumping-amount measuring arrangement 2130, laser light emittedfrom the light source 2141 is incident on a recording layer on a surfaceof the optical disc D via beam splitters 2142 and 2147 and anoptical-fiber cable 2148, and the reflected light is incident on thephoto-detector 2146 via the optical-fiber cable 2148, beam splitter2147, a mirror 2149 and the beam splitter 2145. The reflected laserlight from the probe array and the reflected laser light from theoptical disc D both incident on the beam splitter 2145 are synthesizedand then incident on the photo-detector 2146. The FFT measuring device2131 performs a Fourier transform process on a detection signal which isbased on jumping of the probe array and obtains a jumping amount of theprobe array.

[0418]FIG. 55 shows a result of jumping amounts obtained by thisjumping-amount measuring arrangement 2130. In FIG. 55, a vertical axisindicates a jumping amount of the probe arrays 2110 and 2120, and ahorizontal axis indicates a measurement time. An upper graph shows astate of jumping of the probe array 2110 while a lower graph shows astate of jumping of the probe array 2120.

[0419] According to FIG. 55, when σ represents a standard deviation of ajumping amount, 2σ=approximately 1.0 nm for the probe array 2110 while2σ=0.6 nm for the probe array 2120.

[0420] Accordingly, when the probe array 2120 is used, because the probearray 2120 has the pad portions 2123 arranged at the central position,it is possible to reduce a jumping amount in comparison to the probearray 2110, and to achieve stable sliding.

[0421] As embodiments of the present invention, the probe arrays orsingle probes which generate optical near-fields have been described inparticular. However, the present invention can also be applied to probearrays or single probes which emit propagation light (light other thanan optical near-field). In such a probe array or a single probe, anaperture at a (each) tip is changed in size depending on a device whichprovides an energy to a recording medium. In this probe array or singleprobe, in a case where an energy is provided mainly in a form ofordinary light (propagation light) as a fiber probe proposed by thepresent applicant in Japanese Laid-Open Patent Application No. 11-271339for example, a size of an aperture at a (each) tip is made to be on theorder of a wavelength of light to be emitted or larger than it. However,in a probe array or a single probe, in a case where an energy isprovided in a form of evanescent light (optical near-field), a size ofan aperture at a (each) tip is made to be smaller than a wavelength oflight to be emitted. Thereby, the present invention can be applied evento an internal-light-gathering-type probe.

[0422] The present invention can be applied to either a form in whichpropagation light is generated or a form in which an optical near-fieldis generated described above. Further, the present invention can also beapplied to a form in which both an optical near-field and propagationlight are emitted from a tip of a (each) projecting portionsimultaneously.

[0423] Further, although the example using the SOI substrate 2010 madeby crystal growth in making the probe array or single probe wasdescribed, it is also possible to use one which is made by a stickingmethod in which, after single-crystal silicon wafers are stuck by directbonding or the like, silicon on the active-layer-2011 side is polishedso that it is dressed to have a predetermined thickness, or by an SIMOXmethod in which an oxide film is formed under a surface of a substrateby ion implantation of oxygen ions. In each of these cases, a uniformityof the active layer 2011 in thickness is obtained in an atomic level.

[0424] Further, although, as a glass substrate 2014 having a property oftransmitting light, #7740 made by Corning Incorporated and SW-3 made byAsahi Techno Glass Corporation (Iwaki Glass) were mentioned, anothersubstrate may be used instead. Specifically, when the above-describeddirect bonding in a normal temperature is used, a quarz substrate orlight-transmitting resin can be used. In particular, in a case wherequarz is used, it is possible to bond a light-transmitting-propertysubstrate and an Si layer together by direct bonding in a hightemperature. In this method, a surface of the substrate is sufficientlycleaned, dusts and stains on the surface are removed and the surface isdried. Then, the surfaces are caused to come into contact with oneanother in a normal atmosphere. Then, heat treatment or anneal at higherthan 900° C. is performed in a nitrogen gas. Thereby, the substrate isbonded.

[0425] Further, although the example using anodic bonding was describedas a method of bonding an active layer 2011 of an SOI substrate 2010 anda glass substrate 2014 together, another bonding method can also beused. Specifically, as a method of bonding an active layer 2011 and aglass substrate 2014 together, direct bonding in a normal temperature(normal-temperature bonding) may be used. In the normal-temperaturebonding, after so-called RCA cleaning is performed on a mirror-polishedsilicon wafer, glass substrate and/or metal substrate, FAB (Fast AtomicBeam) of Ar is incident on two substrates respectively for a time on theorder of 300 seconds in a vacuum chamber in an atmosphere of 10⁻⁹ Torrsimultaneously, and, then, these substrates are pressed to one anotherby a pressure of 10 MPa so as to be stuck together. Thereby, a bondingstrength thereof after being returned to be in atmosphere is equal to orhigher than 12 MPa. It is also possible to make a probe array accordingto the present invention by bonding together n active layer 2011 and aglass substrate 2014 which is a quarz substrate by normal-temperaturebonding. Further, in the above-mentioned bonding, other than bonding ofan active layer 2011 with a glass substrate 2014 having a property oftransmitting light, it is also possible to make a probe array accordingto the present invention by bonding of the above-described GaP or TiO₂layer, n-type Si layer 2052, low-concentration Si layer 2072 orhigh-concentration p-type Si layer 82 with a light-transmitting-propertysubstrate. The above-mentioned RCA cleaning is a cleaning method,proposed by RCA Corporation of United States of America, using hydrogenperoxide as a base.

[0426] Further, it is also possible to bond an Si layer and alight-transmitting glass substrate 2014 together by glass bonding usinglow-melting-point glass (frit glass).

[0427] Further, it is also possible to bond a layer in which an apertureis made and a light-transmitting glass substrate 2014 together withadhesive. In this case, a glass substrate is used, and an opticaladhesive (for example, V40-J91 of Suruga Seiki Co., Ltd.) made to have arefractive index the same as that of glass may be used.

[0428] Further, although anisotropic etching using KOH or the like isemployed for making an Si projecting portion 2003 in the above-describedembodiment, it is also possible to employ dry etching such as reactiveion etching (RIE) or the like instead.

[0429] Further, although a layer made of a high-refractive-indexmaterial, from which a projecting portion is made, is formed on a glasssubstrate by bonding in the above-described embodiment, it is alsopossible to form a film made of a high-refractive-index material on aglass substrate or the like by thin film forming technique such asdeposition/evaporation, spattering method, plasma CVD (Chemical VaporDeposition) method, thermal CVD method, photo CVD method, or the like.

[0430] Further, although the probe array having the plurality of Siprojecting portions 2003 mounted on the glass substrate 2002 wasdescribed as an embodiment of the preset invention, the advantages ofthe present invention can be obtained also from a combination in which asingle Si projecting portion 2003 is mounted on a glass substrate 2002,and such a combination is included in the present invention.

[0431] Further, although the form in which the Si projecting portion2003 has the shape of a quadrilateral pyramid was described as anembodiment of the present invention, it is also possible for an Siprojecting portion 2003 has a shape of cone or a shape of truncatedcone.

[0432] Further, although examples mainly using Si as ahigh-refractive-index material forming projecting portions weredescribed as embodiments of the present invention, embodiments of thepresent invention are not limited to these example, and, C (diamond),amorphous Si, microcrystalline Si, polycrystalline Si, Si_(x)N_(y)(where x and y are arbitrary numbers), TiO₂, TeO₂, Al₂O₃, Y₂O₃, La₂O₂S,LiGaO₂, BaTiO₃, SrTiO₃, PbTiO₃, KNbO₃, K(Ta, Nb)O₃(KTN), LiNbO₃, LiTaO₃,Pb(Mg_(1/3)Nb₂/₃)O₃, (Pb, La)(Zr, Ti)O₂, (Pb, La)(Hf, Ti)O₃, PbGeO₃,Li₂GeO₃, MgAl₂O₄, CoFe₂O₄, (Sr, Ba)Nb₂O₆, La₂Ti₂O₇, Nd₂Ti₂O₇,Ba₂TiSi₁₂O₈, Pb₅Ge₃O₁₁, Bi₄Ge₃O₁₂, Bi₄Si₃O₁₂, Y₃Al₅O₁₂, Gd₃Fe₅O₁₂, (Gd,Bi)₃Fe₅O₁₂, Ba₂NaNbOl₅, Bil₂GeO₂₀, Bi₁₂SiO₂₀, Cal₂Al₁₄O₃₃, LiF, NaF, KF,RbF, CsF, NaCl, KCl, RbCl, CsCl, AgCl, TlCl, CuCl, LiBr, NaBr, KBr,CsBr, AgBr, TlBr, LiI, NaI, KI, CsI, Tl(Br, I), Tl(Cl, Br), MgF₂, CaF₂,SrF₂, BaF₂, PbF₂, Hg₂Cl₂, FeF₃, CsPbCl₃, BaMgF₄, BaZnF₄, Na₂SbF₅,LiClO₄.3H₂O, CdHg(SCN)₄, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, α-HgS, PbS,PbSe, EuS, EuSe, GaSe, LiInS₂, AgGaS₂, AgGaSe₂, TlInS₂, TlInSe₂,TlGaSe₂, TlGaS₂, As₂S₃, As₂Se₃, Ag₃AsS₃, Ag₃SbS₃, CdGa₂S₄, CdCr₂S₄,Tl₃TaS₄, Tl₃TaSe₄, Tl₃VS₄, Tl₃AsS₄, Tl₃PSe₄, GaP, GaAs, GaN, (Ga, Al)As,Ga(As, P), (InGa)P, (InGa)As, (Ga, Al)Sb, Ga(AsSb), (InGa)(AsP),(GaAl)(AsSb), ZnGeP₂, CaCO₃, NaNO₃, α-HIO₃, α-LiIO₃, KIO₂F₂, FeBO₃,Fe₃BO₆, KB₅O₈.4H₂O, BeSO₄.2H₂O, CuSO₄.5H₂O, Li₂SO₄H₂O, KH₂PO₄, KD₂PO₄,NH₄H₂PO₄, KH₂AsO₄, KD₂AsO₄, CsH₂AsO₄, CsD₂AsO₄, KTiOPO₄, RbTiOPO₄, (K,Rb)TiOPO₄, PbMoO₄, β-Gd₂(MoO₄)₃, β-Tb₂(MoO₄)₃, Pb₂MoO₅, Bi₂WO₆,K₂MoOS₃.KCl, YVO₄, Ca₃(VO₄)₂, Pb₅(GeO₄)(VO₄)₂, CO(NH₂)₂, Li(COOH).H₂O,Sr(COOH)₂, (NH₄CH₂COOH)₃H₂SO₄, (ND₄CD₂COOD)₃D₂SO₄, (NH₄CH₂COOH)₃H₂BeF,(NH₄)₂C₂O₄.H₂O, C₄H₃N₃O₄, C₄H₉NO₃, C₆H₄(NO₂)₂, C₆H₄NO₂Br, C₆H₄NO₂C₁,C₆H₄NO₂NH₂, C₆H₄(NH₄)OH, C₆H₄(CO₂)₂HCs, C₆H₄(CO₂)₂HRb, C₆H₃NO₂CH₃NH₂,C₆H₃CH₃(NH₂)₂, C₆H₁₂O₅.H₂OKH(C₈H₄O₄), C₁₀H₁₁N₃O₆, or [CH₂.CF₂]_(n) canbe used instead.

[0433] Further, the present invention is not limited to theabove-described embodiments, and variations and modifications may bemade without departing from the scope of the present invention.

[0434] The present application is based on Japanese priority applicationNos. 11-157699, 11-204244, 11-326169, 2000-125127, and 2000-115825,filed on Jun. 4, 1999, Jul. 19, 1999, Nov. 16, 1999, Apr. 26, 2000 andApr. 11, 2000, the entire contents of which are hereby incorporated byreference.

What is claimed is:
 1. An optical-pickup slider, comprising: a layer;and a light-transmitting-property substrate, wherein: said layer has atapered through hole; and said light-transmitting-property substrate isbonded to a surface of said layer, on which surface a larger opening ofsaid tapered through hole exists.
 2. The optical-pickup slider asclaimed in claim 1, wherein said light-transmitting-property substratehas a thickness at least ten times a thickness of said layer.
 3. Theoptical-pickup slider as claimed in claim 1, wherein glass or TiO₂ isused as a material of said light-transmitting-property substrate when awavelength of light to be incident is on the order of 2 μm to the orderof 0.4 μm, but quarz glass, MgO, Al₂O₃, Y₂O₃ or diamond is used as amaterial of said light-transmitting-property substrate when a wavelengthof light to be incident is equal to or shorter than 0.4 μm.
 4. Theoptical-pickup slider as claimed in claim 1, wherein anon-light-transmitting film is provided at least on an inclined surfaceof said tapered through hole.
 5. The optical-pickup slider as claimed inclaim 4, wherein said non-light-transmitting film is made of metal orresistivity-lowered semiconductor.
 6. The optical-pickup slider asclaimed in claim 4, wherein said non-light-transmitting film is made ofeutectic of metal and said layer.
 7. The optical-pickup slider asclaimed in claim 4, wherein: Si is used as a material of said layer; andsaid non-light-transmitting film is formed as a result of resistivity ofat least the inclined surface of said tapered through hole beinglowered.
 8. An optical-pickup slider comprising: a first substrate; alayer layered on said first substrate and having a thickness smallerthan that of said first substrate, wherein: a tapered through hole ismade in said layer; and after a light-transmitting-property substrate isbonded to a surface of said layer, said first substrate is removed sothat an aperture at a tip of said tapered through hole is exposed.
 9. Anoptical-pickup slider comprising: a first substrate; a layer layered onsaid first substrate and having a thickness smaller than that of saidfirst substrate, wherein: a tapered through hole is made in said layer;and after a light-transmitting-property substrate is bonded to a surfaceof said layer, said first substrate is removed, and, then, a ski shapeor a pad shape is made in said layer at a position of an aperture at atip of said tapered through hole.
 10. An optical-pickup slidercomprising: a first substrate; a layer layered on said first substrateand having a thickness smaller than that of said first substrate,wherein: a ski shape or a pad shape having a tapered through hole ismade in said layer; and after a light-transmitting-property substrate isbonded to a surface of said layer, said first substrate is removed sothat an aperture at a tip of said tapered through hole is exposed. 11.An optical-pickup slider comprising: a first substrate; a layer layeredon said first substrate and having a thickness smaller than that of saidfirst substrate, wherein: a tapered through hole is made in said layer;and after a film of a non-light-transmitting-property material isprovided on at least an inclined surface of said tapered through hole, alight-transmitting-property substrate is bonded to a surface of saidlayer, and, after said first substrate is removed, a portion of thenon-light-transmitting-property material is removed at an aperture at atip of said tapered through hole so that said aperture is exposed.
 12. Amethod of manufacturing an optical-pickup slider comprising the stepsof: a) making a tapered through hole in a layer layered on a firstsubstrate and having a thickness smaller than that of said firstsubstrate; and b) after bonding a light-transmitting-property substrateto a surface of said layer, removing said first substrate so as toexpose an aperture at a tip of said tapered through hole.
 13. A methodof manufacturing an optical-pickup slider comprising the steps of: a)making a tapered through hole in a layer layered on a first substrateand having a thickness smaller than that of said first substrate; and b)after bonding a light-transmitting-property substrate to a surface ofsaid layer, removing said first substrate, and, then, making a ski shapeor a pad shape in said layer at a position of an aperture at a tip ofsaid tapered through hole.
 14. A method of manufacturing anoptical-pickup slider comprising the steps of: a) making a ski shape ora pad shape having a tapered through hole in a layer layered on a firstsubstrate and having a thickness smaller than that of said firstsubstrate; and b) after bonding a light-transmitting-property substrateto a surface of said layer, removing said first substrate so as toexpose an aperture at a tip of said tapered through hole.
 15. A methodof manufacturing an optical-pickup slider comprising the steps of: a)making a tapered through hole in a layer layered on a first substrateand having a thickness smaller than that of said first substrate; and b)after providing a film of a non-light-transmitting-property material onat least an inclined surface of said tapered through hole, bonding alight-transmitting-property substrate to a surface of said layer, and,after removing said first substrate, removing a portion of thenon-light-transmitting-property material at an aperture at a tip of saidtapered through hole so as to expose said aperture.
 16. A method ofmanufacturing an optical-pickup slider comprising the steps of: a)making a tapered through hole in a layer layered on a first substrateand having a thickness smaller than that of said first substrate; and b)after forming eutectic of metal and said layer on at least an inclinedsurface of said tapered through hole, bonding alight-transmitting-property substrate to a surface of said layer, andremoving said first substrate so as to expose an aperture at a tip ofsaid tapered through hole.
 17. A method of manufacturing anoptical-pickup slider comprising the steps of: a) making a taperedthrough hole in an Si layer layered on a first substrate and having athickness smaller than that of said first substrate; and b) afterlowering resistivity of a surface of at least an inclined surface ofsaid tapered through hole, bonding a light-transmitting-propertysubstrate to a surface of said layer, and removing said first substrateso as to expose an aperture at a tip of said tapered through hole.
 18. Aprobe comprising: a substrate having a property of transmitting light;and a projecting portion formed on said substrate, and made of amaterial having a refractive index higher than that of said substrate,wherein said projecting portion has light from said substrate incidentthereon, and generates one of or both an optical near-field andpropagation light at a tip thereof.
 19. The probe as claimed in claim18, wherein said projecting portion is made of a single-crystal materialhaving a refractive index higher than that of said substrate.
 20. Theprobe as claimed in claim 18, wherein said projecting portion is made ofa single-crystal Si (silicon) having a refractive index higher than thatof said substrate.
 21. The probe as claimed in claim 18, wherein saidprojecting portion is made from a Gap layer.
 22. The probe as claimed inclaim 18, wherein said projecting portion is made of a material obtainedas a result of a predetermined amount of impurities being mixed to amaterial having a refractive index higher than that of said substrate.23. The probe as claimed in claim 18, wherein said projecting portion ismade of an n-type Si material having a refractive index higher than thatof said substrate.
 24. The probe as claimed in claim 18, wherein saidprojecting portion is made of a high-concentration p-type Si materialhaving a refractive index higher than that of said substrate.
 25. Theprobe as claimed in claim 18, wherein said projecting portion has aplurality of tapering angles on an outer wall thereof.
 26. The probe asclaimed in claim 18, further comprising a bank portion having the sameheight as that of said projecting portion and arranged to surround saidprojecting portion.
 27. The probe as claimed in claim 18, furthercomprising a bank portion made of the same material as that of saidprojecting portion and arranged to surround said projecting portion. 28.The probe as claimed in claim 18, wherein: a rotating recording medium,on which information is recorded, is arranged at a tip of saidprojecting portion; and said probe further comprises a bank portionarranged to surround said projecting portion and having an openingprovided in a direction in which air flows due to rotation of therotating recording medium.
 29. The probe as claimed in claim 28, whereinsaid projecting portion is located at a position such that a tip of saidprojecting portion and an end of said bank portion in arotating-recording-medium-going-out direction coincide with one anotherin a direction perpendicular to a rotating-recording-medium-coming-indirection, or at a position such that said tip of said projectingportion is located on a rotating-recording-medium-coming-in side of saidend of said bank portion.
 30. The probe as claimed in claim 28, whereinsaid bank portion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said substrate to arotating-recording-medium-going-out side of said substrate, at an endthereof in a rotating-recording-medium-going-out direction.
 31. Theprobe as claimed in claim 28, wherein said bank portion has a taperedportion, inclined from a rotating-recording-medium-coming-in side ofsaid substrate to a rotating-recording-medium-going-out side of saidsubstrate, at a bank thereof in a rotating recording-medium-coming-indirection.
 32. The probe as claimed in claim 28, wherein said bankportion has a tapered portion, inclined in a radial direction of therotating recording medium, at a bank(s) approximately parallel to arotating-recording-medium-coming-in direction.
 33. The probe as claimedin claim 28, wherein a length between an end of said substrate on arotating-recording-medium-going-out side and a tip of said projectingportion is determined based on a thickness thereof, a refractive indexthereof and a numerical aperture of an optical component from whichlight is incident.
 34. The probe as claimed in claim 18, wherein: arotating recording medium, on which information is recorded, is arrangedat a tip of said projecting portion; and said probe further comprises: abank portion made of the same material as that of said projectingportion, having the same height as that of said projecting portion andarranged to surround said projecting portion; and a pad portion made ofthe same material as that of said projecting portion, having the sameheight as that of said projecting portion and coming into contact with afacing side of the rotating recording medium.
 35. The probe as claimedin claim 34, wherein said pad portion is formed at a central positionbetween a rotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said substrate is
 1. 36. The probe as claimedin claim 18, wherein a light-blocking film is formed on said projectingportion and a side of said substrate on which said projecting portion isformed, or only on said projecting portion.
 37. The probe as claimed inclaim 18, wherein a light-blocking film is formed on an inclined surfaceof said projecting portion and a side of said substrate on which saidprojecting portion is formed, or only on the inclined surface of saidprojecting portion.
 38. A method of manufacturing a probe comprising thesteps of: a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising ahigh-refractive-index layer having a refractive index higher than thatof said first substrate, an intermediate layer layered on saidhigh-refractive-index layer and a supporting layer layered on saidintermediate layer, in a condition in which said first substrate is incontact with said high-refractive-index layer; b) removing saidsupporting layer included in said second substrate; c) patterning bysaid intermediate layer exposed as a result of said supporting layerbeing removed; d) etching said high-refractive-index layer using thepatterned intermediate layer so as to form a cone-like or pyramid-likeprojecting portion on said first substrate; and e) removing thepatterned intermediate layer so that the probe having the cone-like orpyramid-like projecting portion made from said high-refractive-indexlayer on said first substrate be obtained.
 39. The method as claimed inclaim 38, wherein said high-refractive-index layer is of Si and saidintermediate layer is of SiO₂.
 40. The method as claimed in claim 38,wherein said high-refractive-index layer is of GaP and said intermediatelayer is of SiO₂.
 41. The method as claimed in claim 38, wherein saidhigh-refractive-index layer is of a single-crystal material, saidintermediate layer is of SiO₂ and said supporting layer is of Si. 42.The method as claimed in claim 38, wherein said high-refractive-indexlayer is of a single-crystal Si, said intermediate layer is of SiO₂ andsaid supporting layer is of Si.
 43. The method as claimed in claim 38,wherein, in the etching, the projecting portion is formed so as to havea plurality of tapering angles on an outer wall thereof.
 44. The methodas claimed in claim 38, wherein, in the etching, a bank portion havingthe same height as that of said projecting portion and arranged tosurround said projecting portion is further formed.
 45. The method asclaimed in claim 38, wherein etching is performed on the samehigh-refractive-index layer and a bank portion having the same height asthat of said projecting portion and arranged to surround said projectingportion is further formed.
 46. The method as claimed in claim 38,wherein: said probe is such that a rotating recording medium, on whichinformation is recorded, is arranged at a tip of said projectingportion; and in the etching, a bank portion arranged to surround saidprojecting portion and having an opening provided in a direction, inwhich air flows due to rotation of the rotating recording medium, isfurther formed.
 47. The method as claimed in claim 46, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at anend thereof in a rotating-recording-medium-going-out direction.
 48. Themethod as claimed in claim 46, wherein said bank portion has a taperedportion, inclined from a rotating-recording-medium-coming-in side ofsaid first substrate to a rotating-recording-medium-going-out side ofsaid first substrate, at a bank thereof in arotating-recording-medium-coming-in direction.
 49. The method as claimedin claim 46, wherein said bank portion has a tapered portion, inclinedin a radial direction of the rotating recording medium, at a bank(s)approximately parallel to a rotating-recording-medium-coming-indirection.
 50. The method as claimed in claim 46, wherein a lengthbetween an end of said first substrate in arotating-recording-medium-going-out direction and a tip of saidprojecting portion is determined based on a thickness thereof, arefractive index thereof and a numerical aperture of an opticalcomponent from which light is incident.
 51. The method as claimed inclaim 38, wherein: said probe is such that a rotating recording mediumon which information is recorded is arranged at a tip of said projectingportion; and etching is performed on the same high-refractive-indexlayer, and, said projecting portion, a bank portion arranged to surroundsaid projecting portion and a pad portion coming into contact with therotating recording medium are formed on a side of said first substratefacing the rotating recording medium.
 52. The method as claimed in claim51, wherein said pad portion is formed at a central position between arotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 53. The method asclaimed in claim 38, wherein, after said intermediate layer is removed,a light-blocking film is formed on said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onsaid projecting portion.
 54. The method as claimed in claim 38, wherein,after said intermediate layer is removed, a light-blocking film isformed on an inclined surface of said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onthe inclined surface of said projecting portion.
 55. The method asclaimed in claim 38, wherein, when patterning is performed by saidintermediate layer, said intermediate layer is to have a predeterminedthickness at a position of a tip of said projecting portion to be madeand said intermediate layer at positions other than that of the tip ofsaid projecting portion is to have a thickness equal to or smaller thansaid predetermined thickness.
 56. A method of manufacturing a probecomprising the steps of: a) bonding together a first substrate having aproperty of transmitting light and a second substrate comprising asupporting layer, an intermediate layer formed on said supporting layerand a GaP layer formed on said intermediate layer, in a condition inwhich said first substrate and said GaP layer are in contact with oneanother; b) removing said supporting layer included in said secondsubstrate; c) patterning by said intermediate layer; exposed as a resultof said supporting layer being removed; d) etching said GaP layer usingthe patterned intermediate layer so as to form a cone-like orpyramid-like projecting portion on said first substrate; and e) removingthe patterned intermediate layer so that the probe having the cone-likeor pyramid-like projecting portion made from said GaP layer on saidfirst substrate be obtained.
 57. The method as claimed in claim 56,wherein, in the etching, the projecting portion is formed so as to havea plurality of tapering angles on an outer wall thereof.
 58. The methodas claimed in claim 56, wherein, in the etching, a bank portion havingthe same height as that of said projecting portion and arranged tosurround said projecting portion is further formed.
 59. The method asclaimed in claim 56, wherein etching is performed on the same GaP layerand a bank portion made of the same material as that of said projectingportion and arranged to surround said projecting portion is furtherformed.
 60. The method as claimed in claim 56, wherein: said probe issuch that a rotating recording medium, on which information is recorded,is arranged at a tip of said projecting portion; and in the etching, abank portion arranged to surround said projecting portion and having anopening provided in a direction in which air flows due to rotation ofthe rotating recording medium, is further formed.
 61. The method asclaimed in claim 60, wherein said bank portion has a tapered portion,inclined from a rotating-recording-medium-coming-in side of said firstsubstrate to a rotating-recording-medium-going-out side of said firstsubstrate, at an end thereof in a rotating-recording-medium-going-outdirection.
 62. The method as claimed in claim 60, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at abank thereof in a rotating-recording-medium-coming-in direction.
 63. Themethod as claimed in claim 60, wherein said bank portion has a taperedportion, inclined in a radial direction of the rotating recordingmedium, at a bank(s) approximately parallel to arotating-recording-medium-coming-in direction.
 64. The method as claimedin claim 60, wherein a length between an end of said first substrate ina rotating-recording-medium-going-out direction and a tip of saidprojecting portion is determined based on a thickness thereof, arefractive index thereof and a numerical aperture of an opticalcomponent from which light is incident.
 65. The method as claimed inclaim 56, wherein: said probe is such that a rotating recording mediumon which information is recorded is arranged at a tip of said projectingportion; and etching is performed on the same GaP layer, and, saidprojecting portion, a bank portion arranged to surround said projectingportion and a pad portion coming into contact with the rotatingrecording medium are formed on a side of said first substrate facing therotating recording medium.
 66. The method as claimed in claim 65,wherein said pad portion is formed at a central position between arotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 67. The method asclaimed in claim 56, wherein, after said intermediate layer is removed,a light-blocking film is formed on said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onsaid projecting portion.
 68. The method as claimed in claim 56, wherein,after said intermediate layer is removed, a light-blocking film isformed on an inclined surface of said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onthe inclined surface of said projecting portion.
 69. The method asclaimed in claim 56, wherein, when patterning is performed by saidintermediate layer, said intermediate layer is to have a predeterminedthickness at a position of a tip of said projecting portion to be madeand said intermediate layer at positions other than that of the tip ofsaid projecting portion is to have a thickness equal to or smaller thansaid predetermined thickness
 70. A method of manufacturing a probecomprising the steps of: a) bonding together a first substrate having aproperty of transmitting light and a second substrate comprising alow-concentration layer having a refractive index higher than that ofsaid first substrate and having a predetermined amount of impuritiesmixed therein and a high-concentration layer having impurities more thansaid predetermined amount of impurities mixed therein, in a condition inwhich said first substrate and said low-concentration layer are incontact with one another; b) removing said high-concentration layerincluded in said second substrate; c) forming a patterning material on asurface of said low-concentration layer exposed as a result of saidhigh-concentration layer being removed and patterning by said patterningmaterial; d) etching said low-concentration layer using the patternedpatterning material so as to form a cone-like or pyramid-like projectingportion on said first substrate; and e) removing the patternedpatterning material so that the probe having the cone-like orpyramid-like projecting portion made from said low-concentration layeron said first substrate be obtained.
 71. The method as claimed in claim70, wherein, in the etching, the projecting portion is formed so as tohave a plurality of tapering angles on an outer wall thereof.
 72. Themethod as claimed in claim 70, wherein, in the etching, a bank portionhaving the same height as that of said projecting portion and arrangedto surround said projecting portion is further formed.
 73. The method asclaimed in claim 70, wherein etching is performed on the samelow-concentration layer and a bank portion made of the same material asthat of said projecting portion and arranged to surround said projectingportion is further formed.
 74. The method as claimed in claim 70,wherein: said probe is such that a rotating recording medium, on whichinformation is recorded, is arranged at a tip of said projectingportion; and in the etching, a bank portion arranged to surround saidprojecting portion and having an opening provided in a direction inwhich air flows due to rotation of the rotating recording medium, isfurther formed.
 75. The method as claimed in claim 74, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at anend thereof in a rotating-recording-medium-going-out direction.
 76. Themethod as claimed in claim 74, wherein said bank portion has a taperedportion, inclined from a rotating-recording-medium-coming-in side ofsaid first substrate to a rotating-recording-medium-going-out side ofsaid first substrate, at a bank thereof in arotating-recording-medium-coming-in direction.
 77. The method as claimedin claim 74, wherein said bank portion has a tapered portion, inclinedin a radial direction of the rotating recording medium, at a bank(s)approximately parallel to a rotating-recording-medium-coming-indirection.
 78. The method as claimed in claim 74, wherein a lengthbetween an end of said first substrate in arotating-recording-medium-going-out direction and a tip of saidprojecting portion is determined based on a thickness thereof, arefractive index thereof and a numerical aperture of an opticalcomponent from which light is incident.
 79. The method as claimed inclaim 70, wherein: said probe is such that a rotating recording mediumon which information is recorded is arranged at a tip of said projectingportion; and etching is performed on the same low-concentration layer,and, said projecting portion, a bank portion arranged to surround saidprojecting portion and a pad portion coming into contact with therotating recording medium are formed on a side of said first substratefacing the rotating recording medium.
 80. The method as claimed in claim79, wherein said pad portion is formed at a central position between arotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 81. The method asclaimed in claim 70, wherein, after said patterning material is removed,a light-blocking film is formed on said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onsaid projecting portion.
 82. The method as claimed in claim 70, wherein,after said patterning material is removed, a light-blocking film isformed on an inclined surface of said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onthe inclined surface of said projecting portion.
 83. The method asclaimed in claim 70, wherein, when said patterning material is formed,said intermediate layer is to have a predetermined thickness at aposition of a tip of said projecting portion to be made and saidintermediate layer at positions other than that of the tip of saidprojecting portion is to have a thickness equal to or smaller than saidpredetermined thickness
 84. A method of manufacturing a probe comprisingthe steps of: a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising a n-type Si layerhaving a refractive index higher than that of said first substrate and ap-type Si layer, in a condition in which said first substrate and saidn-type Si layer are in contact with one another; b) removing said p-typeSi layer included in said second substrate; c) forming a patterningmaterial on a surface of said n-type Si layer exposed as a result ofsaid p-type Si layer being removed and patterning by said patterningmaterial; d) etching said n-type Si layer using the patterned patterningmaterial so as to form a cone-like or pyramid-like projecting portion onsaid first substrate; and e) removing the patterned patterning materialso that the probe having the cone-like or pyramid-like projectingportion made from said n-type Si layer on said first substrate beobtained.
 85. The method as claimed in claim 84, wherein, in theetching, the projecting portion is formed so as to have a plurality oftapering angles on an outer wall thereof.
 86. The method as claimed inclaim 84, wherein, in the etching, a bank portion having the same heightas that of said projecting portion and arranged to surround saidprojecting portion is further formed.
 87. The method as claimed in claim84, wherein etching is performed on the same n-type Si layer and a bankportion made of the same material as that of said projecting portion andarranged to surround said projecting portion is further formed.
 88. Themethod as claimed in claim 84, wherein: said probe is such that arotating recording medium, on which information is recorded, is arrangedat a tip of said projecting portion; and in the etching, a bank portionarranged to surround said projecting portion and having an openingprovided in a direction in which air flows due to rotation of therotating recording medium, is further formed.
 89. The method as claimedin claim 88, wherein said bank portion has a tapered portion, inclinedfrom a rotating-recording-medium-coming-in side of said first substrateto a rotating-recording-medium-going-out side of said first substrate,at an end thereof in a rotating-recording-medium-going-out direction.90. The method as claimed in claim 88, wherein said bank portion has atapered portion, inclined from a rotating-recording-medium-coming-inside of said first substrate to a rotating-recording-medium-going-outside of said first substrate, at a bank thereof in arotating-recording-medium-coming-in direction.
 91. The method as claimedin claim 88, wherein said bank portion has a tapered portion, inclinedin a radial direction of the rotating recording medium, at a bank(s)approximately parallel to a rotating-recording-medium-coming-indirection.
 92. The method as claimed in claim 88, wherein a lengthbetween an end of said first substrate in arotating-recording-medium-going-out direction and a tip of saidprojecting portion is determined based on a thickness thereof, arefractive index thereof and a numerical aperture of an opticalcomponent from which light is incident.
 93. The method as claimed inclaim 84, wherein: said probe is such that a rotating recording mediumon which information is recorded is arranged at a tip of said projectingportion; and etching is performed on the same n-type Si layer, and, saidprojecting portion, a bank portion arranged to surround said projectingportion and a pad portion coming into contact with the rotatingrecording medium are formed on a side of said first substrate facing therotating recording medium.
 94. The method as claimed in claim 93,wherein said pad portion is formed at a central position between arotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 95. The method asclaimed in claim 84, wherein, after said patterning material is removed,a light-blocking film is formed on said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onsaid projecting portion.
 96. The method as claimed in claim 84, wherein,after said patterning material is removed, a light-blocking film isformed on an inclined surface of said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onthe inclined surface of said projecting portion.
 97. The method asclaimed in claim 84, wherein, when said patterning material is formed,said intermediate layer is to have a predetermined thickness at aposition of a tip of said projecting portion to be made and saidintermediate layer at positions other than that of the tip of saidprojecting portion is to have a thickness equal to or smaller than saidpredetermined thickness
 98. A method of manufacturing a probe comprisingthe steps of: a) bonding together a first substrate having a property oftransmitting light and a second substrate comprising ahigh-concentration p-type Si layer having a refractive index higher thanthat of said first substrate and an n-type Si layer, in a condition inwhich said first substrate and said high-concentration p-type Si layerare in contact with one another; b) removing said n-type Si layerincluded in said second substrate; c) forming a patterning material on asurface of said high-concentration p-type Si layer exposed as a resultof said n-type Si layer being removed and patterning by said patterningmaterial; d) etching said high-concentration p-type Si layer using thepatterned patterning material so as to form a cone-like or pyramid-likeprojecting portion on said first substrate; and e) removing thepatterned patterning material so that the prove having the cone-like orpyramid-like projecting portion made from said high-concentration p-typeSi layer on said first substrate be obtained.
 99. The method as claimedin claim 98, wherein, in the etching, the projecting portion is formedso as to have a plurality of tapering angles on an outer wall thereof.100. The method as claimed in claim 98, wherein, in the etching, a bankportion having the same height as that of said projecting portion andarranged to surround said projecting portion is further formed.
 101. Themethod as claimed in claim 98, wherein etching is performed on the samehigh-concentration p-type Si layer and a bank portion made of the samematerial as that of said projecting portion and arranged to surroundsaid projecting portion is further formed.
 102. The method as claimed inclaim 98, wherein: said probe is such that a rotating recording medium,on which information is recorded, is arranged at a tip of saidprojecting portion; and in the etching, a bank portion arranged tosurround said projecting portion and having an opening provided in adirection in which air flows due to rotation of the rotating recordingmedium, is further formed.
 103. The method as claimed in claim 102,wherein said bank portion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at anend thereof in a rotating-recording-medium-going-out direction.
 104. Themethod as claimed in claim 102, wherein said bank portion has a taperedportion, inclined from a rotating-recording-medium-coming-in side ofsaid first substrate to a rotating-recording-medium-going-out side ofsaid first substrate, at a bank thereof in arotating-recording-medium-coming-in direction.
 105. The method asclaimed in claim 102, wherein said bank portion has a tapered portion,inclined in a radial direction of the rotating recording medium, at abank(s) approximately parallel to a rotating-recording-medium-coming-indirection.
 106. The method as claimed in claim 102, wherein a lengthbetween an end of said first substrate in arotating-recording-medium-going-out direction and a tip of saidprojecting portion is determined based on a thickness thereof, arefractive index thereof and a numerical aperture of an opticalcomponent from which light is incident.
 107. The method as claimed inclaim 98, wherein: said probe is such that a rotating recording mediumon which information is recorded is arranged at a tip of said projectingportion; and etching is performed on the same high-concentration p-typeSi layer, and, said projecting portion, a bank portion arranged tosurround said projecting portion and a pad portion coming into contactwith the rotating recording medium are formed on a side of said firstsubstrate facing the rotating recording medium.
 108. The method asclaimed in claim 107, wherein said pad portion is formed at a centralposition between a rotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 109. The method asclaimed in claim 98, wherein, after said patterning material is removed,a light-blocking film is formed on said projecting portion and a side ofsaid substrate on which said projecting portion is formed, or only onsaid projecting portion.
 110. The method as claimed in claim 98,wherein, after said patterning material is removed, a light-blockingfilm is formed on an inclined surface of said projecting portion and aside of said substrate on which said projecting portion is formed, oronly on the inclined surface of said projecting portion.
 111. The methodas claimed in claim 98, wherein, when said patterning material isformed, said intermediate layer is to have a predetermined thickness ata position of a tip of said projecting portion to be made and saidintermediate layer at positions other than that of the tip of saidprojecting portion is to have a thickness equal to or smaller than saidpredetermined thickness
 112. A probe array comprising: a substratehaving a property of transmitting light; and a plurality of projectingportions formed on said substrate, made of a material having arefractive index higher than that of said substrate, and like cones orpyramids having tips, positions of which are aligned, wherein each ofsaid plurality of projecting portions has light from said substrateincident thereon, and generates one of or both an optical near-field andpropagation light at the tip thereof.
 113. The probe array as claimed inclaim 112, wherein each of said plurality of projecting portions is madeof a single-crystal material having a refractive index higher than thatof said substrate.
 114. The probe array as claimed in claim 112, whereineach of said plurality of projecting portions is made of asingle-crystal Si (silicon) having a refractive index higher than thatof said substrate.
 115. The probe array as claimed in claim 112, whereineach of said plurality of projecting portions is made from a Gap layer.116. The probe array as claimed in claim 112, wherein each of saidplurality of projecting portions is made of a material obtained as aresult of a predetermined amount of impurities being mixed to a materialhaving a refractive index higher than that of said substrate.
 117. Theprobe array as claimed in claim 112, wherein each of said plurality ofprojecting portions is made of an n-type Si material having a refractiveindex higher than that of said substrate.
 118. The probe array asclaimed in claim 112, wherein each of said plurality of projectingportions is made of a high-concentration p-type Si material having arefractive index higher than that of said substrate.
 119. The probearray as claimed in claim 112, wherein each of said plurality ofprojecting portions has a plurality of tapering angles on an outer wallthereof.
 120. The probe array as claimed in claim 112, furthercomprising a bank portion having the same height as that of saidplurality of projecting portions and arranged to surround said pluralityof projecting portions.
 121. The probe array as claimed in claim 112,further comprising a bank portion made of the same material as that ofsaid plurality of projecting portions and arranged to surround saidplurality of projecting portions.
 122. The probe array as claimed inclaim 112, wherein: a rotating recording medium, on which information isrecorded, is arranged at the tips of said plurality of projectingportions; and said probe array further comprises a bank portion arrangedto surround said plurality of projecting portions and having an openingprovided in a direction in which air flows due to rotation of therotating recording medium.
 123. The probe array as claimed in claim 122,wherein each of said plurality of projecting portions is located at aposition such that a tip of each of said plurality of projectingportions and an end of said bank portion in arotating-recording-medium-going-out direction coincide with one anotherin a direction perpendicular to a rotating-recording-medium-coming-indirection, or at a position such that said tip of each of said pluralityof projecting portions is located on arotating-recording-medium-coming-in side of said end of said bankportion.
 124. The probe array as claimed in claim 122, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said substrate to arotating-recording-medium-going-out side of said substrate, at an endthereof in a rotating-recording-medium-going-out direction.
 125. Theprobe array as claimed in claim 122, wherein said bank portion has atapered portion, inclined from a rotating-recording-medium-coming-inside of said substrate to a rotating-recording-medium-going-out side ofsaid substrate, at a bank thereof in arotating-recording-medium-coming-in direction.
 126. The probe array asclaimed in claim 122, wherein said bank portion has a tapered portion,inclined in a radial direction of the rotating recording medium, at abank(s) approximately parallel to a rotating-recording-medium-coming-indirection.
 127. The probe array as claimed in claim 122, wherein alength between an end of said substrate in arotating-recording-medium-going-out direction and the tip of each ofsaid plurality of projecting portions is determined based on a thicknessthereof, a refractive index thereof and a numerical aperture of anoptical component from which light is incident.
 128. The probe array asclaimed in claim 112, wherein: a rotating recording medium, on whichinformation is recorded, is arranged at the tips of said plurality ofprojecting portions; and said probe array further comprises: a bankportion made of the same material as that of said plurality ofprojecting portions, and arranged to surround said plurality ofprojecting portions; and a pad portion made of the same material as thatof said plurality of projecting portions, and coming into contact withthe rotating recording medium.
 129. The probe array as claimed in claim128, wherein said pad portion is formed at a central position between arotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said substrate is
 1. 130. The probe array asclaimed in claim 112, wherein a light-blocking film is formed on each ofsaid plurality of projecting portions and a side of said substrate onwhich said plurality of projecting portions are formed, or only on eachof said plurality of projecting portions.
 131. The probe array asclaimed in claim 112, wherein a light-blocking film is formed on aninclined surface of each of said plurality of projecting portions and aside of said substrate on which said plurality of projecting portionsare formed, or only on the inclined surface of each of said plurality ofprojecting portions.
 132. A method of manufacturing a probe arraycomprising the steps of: a) bonding together a first substrate having aproperty of transmitting light and a second substrate comprising ahigh-refractive-index layer having a refractive index higher than thatof said first substrate, an intermediate layer layered on saidhigh-refractive-index layer and a supporting layer layered on saidintermediate layer, in a condition in which said first substrate is incontact with said high-refractive-index layer; b) removing saidsupporting layer included in said second substrate; c) patterning bysaid intermediate layer exposed as a result of said supporting layerbeing removed; d) etching said high-refractive-index layer using thepatterned intermediate layer so as to form a plurality of cone-like orpyramid-like projecting portions on said first substrate; and e)removing the patterned intermediate layer so that the probe array havingthe plurality of cone-like or pyramid-like projecting portions made fromsaid high-refractive-index layer on said first substrate be obtained.133. The method as claimed in claim 132, wherein saidhigh-refractive-index layer is of Si and said intermediate layer is ofSiO₂.
 134. The method as claimed in claim 132, wherein saidhigh-refractive-index layer is of GaP and said intermediate layer is ofSiO₂.
 135. The method as claimed in claim 132, wherein saidhigh-refractive-index layer is of a single-crystal material, saidintermediate layer is of SiO₂ and said supporting layer is of Si. 136.The method as claimed in claim 132, wherein said high-refractive-indexlayer is of a single-crystal Si, said intermediate layer is of SiO₂ andsaid supporting layer is of Si.
 137. The method as claimed in claim 132,wherein, in the etching, each of the plurality of projecting portions isformed so as to have a plurality of tapering angles on an outer wallthereof.
 138. The method as claimed in claim 132, wherein, in theetching, a bank portion having the same height as that of said pluralityof projecting portions and arranged to surround said plurality ofprojecting portions is further formed.
 139. The method as claimed inclaim 132, wherein etching is performed on the samehigh-refractive-index layer and a bank portion having the same height asthat of said plurality of projecting portions and arranged to surroundsaid plurality of projecting portions is further formed.
 140. The methodas claimed in claim 132, wherein: said probe array is such that arotating recording medium, on which information is recorded, is arrangedat tips of said plurality of projecting portions; and in the etching, abank portion arranged to surround said plurality of projecting portionsand having an opening provided in a direction in which air flows due torotation of the rotating recording medium, is further formed.
 141. Themethod as claimed in claim 140, wherein said bank portion has a taperedportion, inclined from a rotating-recording-medium-coming-in side ofsaid first substrate to a rotating-recording-medium-going-out side ofsaid first substrate, at an end thereof in arotating-recording-medium-going-out direction.
 142. The method asclaimed in claim 140, wherein said bank portion has a tapered portion,inclined from a rotating-recording-medium-coming-in side of said firstsubstrate to a rotating-recording-medium-going-out side of said firstsubstrate, at a bank thereof in a rotating-recording-medium-coming-indirection.
 143. The method as claimed in claim 140, wherein said bankportion has a tapered portion, inclined in a radial direction of therotating recording medium, at a bank(s) approximately parallel to arotating-recording-medium-coming-in direction.
 144. The method asclaimed in claim 140, wherein a length of said first substrate in arotating-recording-medium-moving direction is determined based on athickness thereof, a refractive index thereof and a numerical apertureof an optical component from which light is incident.
 145. The method asclaimed in claim 132, wherein: said probe array is such that a rotatingrecording medium on which information is recorded is arranged at tips ofsaid plurality of projecting portions; and etching is performed on thesame high-refractive-index layer, and, said plurality of projectingportions, a bank portion arranged to surround said plurality ofprojecting portions and a pad portion coming into contact with therotating recording medium are formed on a side of said first substratefacing the rotating recording medium.
 146. The method as claimed inclaim 145, wherein said pad portion is formed at a central positionbetween a rotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 147. The method asclaimed in claim 132, wherein, after said intermediate layer is removed,a light-blocking film is formed on each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on each of said plurality ofprojecting portions.
 148. The method as claimed in claim 132, wherein,after said intermediate layer is removed, a light-blocking film isformed on an inclined surface of each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on the inclined surface of eachof said plurality of projecting portions.
 149. The method as claimed inclaim 132, wherein, when patterning is performed by said intermediatelayer, said intermediate layer is to have a predetermined thickness atpositions of respective tips of said plurality of projecting portions tobe made and said intermediate layer at positions other than those of therespective tips of said plurality of projecting portions is to have athickness equal to or smaller than said predetermined thickness.
 150. Amethod of manufacturing a probe array comprising the steps of: a)bonding together a first substrate having a property of transmittinglight and a second substrate comprising a supporting layer, anintermediate layer formed on said supporting layer and a GaP layerformed on said intermediate layer, in a condition in which said firstsubstrate and said GaP layer are in contact with one another; b)removing said supporting layer included in said second substrate; c)patterning by said intermediate layer exposed as a result of saidsupporting layer being removed; d) etching said GaP layer using thepatterned intermediate layer so as to form a plurality of cone-like orpyramid-like projecting portions on said first substrate; and e)removing the patterned intermediate layer so that the probe array havingthe plurality of cone-like or pyramid-like projecting portions made fromsaid GaP layer on said first substrate be obtained.
 151. The method asclaimed in claim 150, wherein, in the etching, each of the plurality ofprojecting portions is formed so as to have a plurality of taperingangles on an outer wall thereof.
 152. The method as claimed in claim150, wherein, in the etching, a bank portion having the same height asthat of said plurality of projecting portions and arranged to surroundsaid plurality of projecting portions is further formed.
 153. The methodas claimed in claim 150, wherein etching is performed on the same GaPlayer and a bank portion made of the same material as that of saidplurality of projecting portions and arranged to surround said pluralityof projecting portions is further formed.
 154. The method as claimed inclaim 150, wherein: said probe array is such that a rotating recordingmedium, on which information is recorded, is arranged at tips of saidplurality of projecting portions; and in the etching, a bank portionarranged to surround said plurality of projecting portions and having anopening provided in a direction in which air flows due to rotation ofthe rotating recording medium, is further formed.
 155. The method asclaimed in claim 154, wherein said bank portion has a tapered portion,inclined from a rotating-recording-medium-coming-in side of said firstsubstrate to a rotating-recording-medium-going-out side of said firstsubstrate, at an end thereof in a rotating-recording-medium-going-outdirection.
 156. The method as claimed in claim 154, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at abank thereof in a rotating-recording-medium-coming-in direction. 157.The method as claimed in claim 154, wherein said bank portion has atapered portion, inclined in a radial direction of the rotatingrecording medium, at a bank(s) approximately parallel to arotating-recording-medium-coming-in direction.
 158. The method asclaimed in claim 154, wherein a length of said first substrate in arotating-recording-medium-moving direction is determined based on athickness thereof, a refractive index thereof and a numerical apertureof an optical component from which light is incident.
 159. The method asclaimed in claim 150, wherein: said probe array is such that a rotatingrecording medium on which information is recorded is arranged at tips ofsaid plurality of projecting portions; and etching is performed on thesame GaP layer, and, said plurality of projecting portions, a bankportion arranged to surround said plurality of projecting portions and apad portion coming into contact with the rotating recording medium areformed on a side of said first substrate facing the rotating recordingmedium.
 160. The method as claimed in claim 159, wherein said padportion is formed at a central position between arotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 161. The method asclaimed in claim 150, wherein, after said intermediate layer is removed,a light-blocking film is formed on each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on each of said plurality ofprojecting portions.
 162. The method as claimed in claim 150, wherein,after said intermediate layer is removed, a light-blocking film isformed on an inclined surface of each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on the inclined surface of eachof said plurality of projecting portions.
 163. The method as claimed inclaim 150, wherein, when patterning is performed by said intermediatelayer, said intermediate layer is to have a predetermined thickness atpositions of respective tips of said plurality of projecting portions tobe made and said intermediate layer at positions other than those of therespective tips of said plurality of projecting portions is to have athickness equal to or smaller than said predetermined thickness
 164. Amethod of manufacturing a probe array comprising the steps of: a)bonding together a first substrate having a property of transmittinglight and a second substrate comprising a low-concentration layer havinga refractive index higher than that of said first substrate and having apredetermined amount of impurities mixed therein and ahigh-concentration layer having impurities more than said predeterminedamount of impurities mixed therein, in a condition in which said firstsubstrate and said low-concentration layer are in contact with oneanother; b) removing said high-concentration layer included in saidsecond substrate; c) forming a patterning material on a surface of saidlow-concentration layer exposed as a result of said high-concentrationlayer being removed and patterning by said patterning material; d)etching said low-concentration layer exposed by the patterning-so as toform a plurality of cone-like or pyramid-like projecting portions onsaid first substrate; and e) removing the patterned patterning materialso that the probe array having the plurality of cone-like orpyramid-like projecting portions made from said low-concentration layeron said first substrate be obtained.
 165. The method as claimed in claim164, wherein, in the etching, each of the plurality of projectingportions is formed so as to have a plurality of tapering angles on anouter wall thereof.
 166. The method as claimed in claim 164, wherein, inthe etching, a bank portion having the same height as that of saidplurality of projecting portions and arranged to surround said pluralityof projecting portions is further formed.
 167. The method as claimed inclaim 164, wherein etching is performed on the same low-concentrationlayer and a bank portion made of the same material as that of saidplurality of projecting portions and arranged to surround said pluralityof projecting portions is further formed.
 168. The method as claimed inclaim 164, wherein: said probe array is such that a rotating recordingmedium, on which information is recorded, is arranged at tips of saidplurality of projecting portions; and in the etching, a bank portionarranged to surround said plurality of projecting portions and having anopening provided in a direction in which air flows due to rotation ofthe rotating recording medium, is further formed.
 169. The method asclaimed in claim 168, wherein said bank portion has a tapered portion,inclined from a rotating-recording-medium-coming-in side of said firstsubstrate to a rotating-recording-medium-going-out side of said firstsubstrate, at an end thereof in a rotating-recording-medium-going-outdirection.
 170. The method as claimed in claim 168, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at abank thereof in a rotating-recording-medium-coming-in direction. 171.The method as claimed in claim 168, wherein said bank portion has atapered portion, inclined in a radial direction of the rotatingrecording medium, at a bank(s) approximately parallel to arotating-recording-medium-coming-in direction.
 172. The method asclaimed in claim 168, wherein a length of said first substrate in arotating-recording-medium-moving direction is determined based on athickness thereof, a refractive index thereof and a numerical apertureof an optical component from which light is incident.
 173. The method asclaimed in claim 164, wherein: said probe array is such that a rotatingrecording medium on which information is recorded is arranged at tips ofsaid plurality of projecting portions; and etching is performed on thesame low-concentration layer, and, said plurality of projectingportions, a bank portion arranged to surround said plurality ofprojecting portions and a pad portion coming into contact with therotating recording medium are formed on a side of said first substratefacing the rotating recording medium.
 174. The method as claimed inclaim 173, wherein said pad portion is formed at a central positionbetween a rotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 175. The method asclaimed in claim 164, wherein, after said patterning material isremoved, a light-blocking film is formed on each of said plurality ofprojecting portions and a side of said substrate on which said pluralityof projecting portions are formed, or only on each of said plurality ofprojecting portions.
 176. The method as claimed in claim 164, wherein,after said patterning material is removed, a light-blocking film isformed on an inclined surface of each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on the inclined surface of eachof said plurality of projecting portions.
 177. The method as claimed inclaim 164, wherein, when said patterning material is formed, saidintermediate layer is to have a predetermined thickness at positions ofrespective tips of said plurality of projecting portions to be made andsaid intermediate layer at positions other than those of the respectivetips of said plurality of projecting portions is to have a thicknessequal to or smaller than said predetermined thickness
 178. A method ofmanufacturing a probe array comprising the steps of: a) bonding togethera first substrate having a property of transmitting light and a secondsubstrate comprising a n-type Si layer having a refractive index higherthan that of said first substrate and a p-type Si layer, in a conditionin which said first substrate and said n-type Si layer are in contactwith one another; b) removing said p-type Si layer included in saidsecond substrate; c) forming a patterning material on a surface of saidn-type Si layer exposed as a result of said p-type Si layer beingremoved and patterning by said patterning material; d) etching saidn-type Si layer using the patterned patterning material so as to form aplurality of cone-like or pyramid-like projecting portions on said firstsubstrate; and e) removing the patterned patterning material so that theprobe array having the plurality of cone-like or pyramid-like projectingportions made from said n-type Si layer on said first substrate beobtained.
 179. The method as claimed in claim 178, wherein, in theetching, each of the plurality of projecting portions is formed so as tohave a plurality of tapering angles on an outer wall thereof.
 180. Themethod as claimed in claim 178, wherein, in the etching, a bank portionhaving the same height as that of said plurality of projecting portionsand arranged to surround said plurality of projecting portions isfurther formed.
 181. The method as claimed in claim 178, wherein etchingis performed on the same n-type Si layer and a bank portion made of thesame material as that of said plurality of projecting portions andarranged to surround said plurality of projecting portions is furtherformed.
 182. The method as claimed in claim 178, wherein: said probearray is such that a rotating recording medium, on which information isrecorded, is arranged at tips of said plurality of projecting portions;and in the etching, a bank portion arranged to surround said pluralityof projecting portions and having an opening provided in a direction inwhich air flows due to rotation of the rotating recording medium, isfurther formed.
 183. The method as claimed in claim 182, wherein saidbank portion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at anend thereof in a rotating-recording-medium-going-out direction.
 184. Themethod as claimed in claim 182, wherein said bank portion has a taperedportion, inclined from a rotating-recording-medium-coming-in side ofsaid first substrate to a rotating-recording-medium-going-out side ofsaid first substrate, at a bank thereof in arotating-recording-medium-coming-in direction.
 185. The method asclaimed in claim 182, wherein said bank portion has a tapered portion,inclined in a radial direction of the rotating recording medium, at abank(s) approximately parallel to a rotating-recording-medium-coming-indirection.
 186. The method as claimed in claim 182, wherein a length ofsaid first substrate in a rotating-recording-medium-moving direction isdetermined based on a thickness thereof, a refractive index thereof anda numerical aperture of an optical component from which light isincident.
 187. The method as claimed in claim 178, wherein: said probearray is such that a rotating recording medium on which information isrecorded is arranged at tips of said plurality of projecting portions;and etching is performed on the same n-type Si layer, and, saidplurality of projecting portions, a bank portion arranged to surroundsaid plurality of projecting portions and a pad portion coming intocontact with the rotating recording medium are formed on a side of saidfirst substrate facing the rotating recording medium.
 188. The method asclaimed in claim 187, wherein said pad portion is formed at a centralposition between a rotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 189. The method asclaimed in claim 178, wherein, after said patterning material isremoved, a light-blocking film is formed on each of said plurality ofprojecting portions and a side of said substrate on which said pluralityof projecting portions are formed, or only on each of said plurality ofprojecting portions.
 190. The method as claimed in claim 178, wherein,after said patterning material is removed, a light-blocking film isformed on an inclined surface of each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on the inclined surface of eachof said plurality of projecting portions.
 191. The method as claimed inclaim 178, wherein, when said patterning material is formed, saidintermediate layer is to have a predetermined thickness at positions ofrespective tips of said plurality of projecting portions to be made andsaid intermediate layer at positions other than those of the respectivetips of said plurality of projecting portions is to have a thicknessequal to or smaller than said predetermined thickness
 192. A method ofmanufacturing a probe array comprising the steps of: a) bonding togethera first substrate having a property of transmitting light and a secondsubstrate comprising a high-concentration p-type Si layer having arefractive index higher than that of said first substrate and an n-typeSi layer, in a condition in which said first substrate and saidhigh-concentration p-type Si layer are in contact with one another; b)removing said n-type Si layer included in said second substrate; c)forming a patterning material on a surface of said high-concentrationp-type Si layer exposed as a result of said n-type Si layer beingremoved and patterning by said patterning material; d) etching saidhigh-concentration p-type Si layer using the patterned patterningmaterial so as to form a plurality of cone-like or pyramid-likeprojecting portions on said first substrate; and e) removing thepatterned patterning material so that the probe array having theplurality of cone-like or pyramid-like projecting portions made fromsaid high-concentration p-type Si layer on said first substrate beobtained.
 193. The method as claimed in claim 192, wherein, in theetching, each of the plurality of projecting portions is formed so as tohave a plurality of tapering angles on an outer wall thereof.
 194. Themethod as claimed in claim 192, wherein, in the etching, a bank portionhaving the same height as that of said plurality of projecting portionsand arranged to surround said plurality of projecting portions isfurther formed.
 195. The method as claimed in claim 192, wherein etchingis performed on the same high-concentration p-type Si layer and a bankportion made of the same material as that of said plurality ofprojecting portions and arranged to surround said plurality ofprojecting portions is further formed.
 196. The method as claimed inclaim 192, wherein: said probe array is such that a rotating recordingmedium, on which information is recorded, is arranged at tips of saidplurality of projecting portions; and in the etching, a bank portionarranged to surround said plurality of projecting portions and having anopening provided in a direction in which air flows due to rotation ofthe rotating recording medium, is further formed.
 197. The method asclaimed in claim 196, wherein said bank portion has a tapered portion,inclined from a rotating-recording-medium-coming-in side of said firstsubstrate to a rotating-recording-medium-going-out side of said firstsubstrate, at an end thereof in a rotating-recording-medium-going-outdirection.
 198. The method as claimed in claim 196, wherein said bankportion has a tapered portion, inclined from arotating-recording-medium-coming-in side of said first substrate to arotating-recording-medium-going-out side of said first substrate, at abank thereof in a rotating-recording-medium-coming-in direction. 199.The method as claimed in claim 196, wherein said bank portion has atapered portion, inclined in a radial direction of the rotatingrecording medium, at a bank(s) approximately parallel to arotating-recording-medium-coming-in direction.
 200. The method asclaimed in claim 196, wherein a length of said first substrate in arotating-recording-medium-moving direction is determined based on athickness thereof, a refractive index thereof and a numerical apertureof an optical component from which light is incident.
 201. The method asclaimed in claim 192, wherein: said probe array is such that a rotatingrecording medium on which information is recorded is arranged at tips ofsaid plurality of projecting portions; and etching is performed on thesame high-concentration p-type Si layer, and, said plurality ofprojecting portions, a bank portion arranged to surround said pluralityof projecting portions and a pad portion coming into contact with therotating recording medium are formed on a side of said first substratefacing the rotating recording medium.
 202. The method as claimed inclaim 201, wherein said pad portion is formed at a central positionbetween a rotating-recording-medium-coming-in end and arotating-recording-medium-going-out end of said first substrate, or at aposition in a range between ±0.1 from said central position assumingthat an entire length of said first substrate is
 1. 203. The method asclaimed in claim 192, wherein, after said patterning material isremoved, a light-blocking film is formed on each of said plurality ofprojecting portions and a side of said substrate on which said pluralityof projecting portions are formed, or only on each of said plurality ofprojecting portions.
 204. The method as claimed in claim 192, wherein,after said patterning material is removed, a light-blocking film isformed on an inclined surface of each of said plurality of projectingportions and a side of said substrate on which said plurality ofprojecting portions are formed, or only on the inclined surface of eachof said plurality of projecting portions.
 205. The method as claimed inclaim 192, wherein, when said patterning material is formed, saidintermediate layer is to have a predetermined thickness at positions ofrespective tips of said plurality of projecting portions to be made andsaid intermediate layer at positions other than those of the respectivetips of said plurality of projecting portions is to have a thicknessequal to or smaller than said predetermined thickness.